Sökning: "Reduced Pressure Chemical Vapor Deposition"

Visar resultat 11 - 15 av 15 avhandlingar innehållade orden Reduced Pressure Chemical Vapor Deposition.

1. 11. Integration of epitaxial SiGe(C) layers in advanced CMOS devices

   Författare :Julius Hållstedt; Henry Radamson; Eugene A. Fitzgerald; KTH; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Silicon Germanium Carbon SiGeC ; Chemical Vapor Deposition CVD ; Epitaxy; Pattern Dependency; MOSFET; Mobility; Spacer Gate Technology; Semiconductor physics; Halvledarfysik;

   Sammanfattning : Heteroepitaxial SiGe(C) layers have attracted immense attention as a material for performance boost in state of the art electronic devices during recent years. Alloying silicon with germanium and carbon add exclusive opportunities for strain and bandgap engineering. LÄS MER

3. 12. Characterization and Analysis of Surface Passivations and Gate Insulators for AlGaN/GaN Microwave HFETs

   Författare :Martin Fagerlind; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; HFET; passivation characterization; passivation; AlGaN GaN heterostructure;

   Sammanfattning : The large bandgap of gallium nitride (GaN) and aluminum gallium nitride (AlGaN) offers an inherently high intrinsic breakdown field. When the materials are joined into the AlGaN/GaN heterostructure a 2-dimensional electron gas (2DEG) with a high electron density as well as high electron mobility is generated. LÄS MER

4. 13. Yttria-Stabilized Zirconia and Gadolinia-Doped Ceria Thin Films for Fuel Cell Applications

   Författare :Steffen Sønderby; Per Eklund; Scott Barnett; Linköpings universitet; []
   Nyckelord :;

   Sammanfattning : Solid oxide fuel cells convert chemical energy directly into electrical energy with high efficiency and low emission of pollutants. However, before fuel cell technology can gain a significant share of the electrical power market, the operation temperature needs to be reduced in order to decrease costs and improve the durability of the cells. LÄS MER

5. 14. Optimization of Ohmic Contacts and Surface Passivation for ‘Buffer-Free’ GaN HEMT Technologies

   Författare :Chen Ding Yuan; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; QuanFINE; passivation; GaN HEMT; pretreatment; ohmic contact;

   Sammanfattning : Gallium nitride high electron mobility transistors (GaN HEMTs) draw attention from high frequency and high power industries due to unique properties including high electron mobility and saturation velocity combined with high breakdown voltage. This makes GaN HEMTs suitable for power devices with high switching speed and high frequency applications with high power density requirements. LÄS MER

7. 15. Development of macropore arrays in silicon and related technologies for X-ray imaging applications

   Författare :Xavier Badel; KTH; []
   Nyckelord :;

   Sammanfattning : Digital devices have started to replace photographic film inX-ray imaging applications. As compared to photographic films,these devices are more convenient to obtain images and tohandle, treat and store these images. LÄS MER