Sökning: "Reduced Pressure Chemical Vapor Deposition"
Visar resultat 6 - 10 av 15 avhandlingar innehållade orden Reduced Pressure Chemical Vapor Deposition.
6. Engineering Multicomponent Nanostructures for MOSFET, Photonic Detector and Hybrid Solar Cell Applications
Sammanfattning : Silicon technologyhas been seekingfor a monolithic solution for a chip where data processing and data communication is performed in the CMOS part and the photonic component, respectively. Traditionally, silicon has been widely considered for electronic applications but not for photonic applications due to its indirect bandgap nature. LÄS MER
7. Cutting Edge Titanium-based CVD Hard Coatings
Sammanfattning : Modern tools for metal cutting applications, such as turning or milling, are typically improved with a thin protective coating. Despite being only a few microns thick, the coating can increase the lifetime of the tool by more than 100 times compared to an uncoated tool. Two different types of techniques are normally used to deposit the coatings, i. LÄS MER
8. Synthesis and Characterization of Transition Metal Diborides
Sammanfattning : This thesis is devoted towards physical vapor deposition (PVD) of thin films of transition-metal (TM) diborides, focused on the material system TiBx, Ti1-xAlxB2-y and CrBx. The metal diborides are a large family of compounds with both metallic and ceramic properties, due to its bonding nature being a mix of covalent and ionic bonds. LÄS MER
9. Application of SiGe(C) in high performance MOSFETs and infrared detectors
Sammanfattning : Epitaxially grown SiGe(C) materials have a great importance for many device applications. In these applications, (strained or relaxed) SiGe(C) layers are grown either selectively on the active areas, or on the entire wafer. LÄS MER
10. SiGeC Heterojunction Bipolar Transistors
Sammanfattning : Heterojunction bipolar transistors (HBT) based on SiGeC havebeen investigated. Two high-frequency architectures have beendesigned, fabricated and characterized. Different collectordesigns were applied either by using selective epitaxial growthdoped with phosphorous or by non-selective epitaxial growthdoped with arsenic. LÄS MER