Sökning: "passivation characterization"
Visar resultat 1 - 5 av 29 avhandlingar innehållade orden passivation characterization.
1. Characterization and Analysis of Surface Passivations and Gate Insulators for AlGaN/GaN Microwave HFETs
Sammanfattning : The large bandgap of gallium nitride (GaN) and aluminum gallium nitride (AlGaN) offers an inherently high intrinsic breakdown field. When the materials are joined into the AlGaN/GaN heterostructure a 2-dimensional electron gas (2DEG) with a high electron density as well as high electron mobility is generated. LÄS MER
2. High Bandgap FAPbBr3 Perovskite Solar Cells : Preparation, Characterization, and Application
Sammanfattning : High bandgap lead-halide perovskite solar cells (PSCs) have gained interest as top cells for tandem solar cells and photoelectrochemical applications due to their suitable energy bands. However, the PSCs have limited stability and performance, and their fabrication in a glovebox and utilization of expensive metal contacts increase the cost and limit their application. LÄS MER
3. Fabrication and Characterization of 3C- and4H-SiC MOSFETs
Sammanfattning : During the last decades, a global effort has been started towards the implementation of energy efficient electronics. Silicon carbide (SiC), a wide band-gap semiconductor is one of the potential candidates to replace the widespread silicon (Si) which enabled and dominates today’s world of electronics. LÄS MER
4. Simulation and Characterization of Silicon Carbide Power Bipolar Junction Transistors
Sammanfattning : The superior characteristics of silicon carbide, compared with silicon, have suggested considering this material for the next generation of power semiconductor devices. Among the different power switches, the bipolar junction transistor (BJT) can provide a very low forward voltage drop, a high current capability and a fast switching speed. LÄS MER
5. Design, Fabrication and Characterization of GaN HEMTs for Power Switching Applications
Sammanfattning : The unique properties of the III-nitride heterostructure, consisting of gallium nitride (GaN), aluminium nitride (AlN) and their ternary compounds (e.g. AlGaN, InAlN), allow for the fabrication of high electron mobility transistors (HEMTs). LÄS MER