Sökning: "InP-InAs"
Hittade 5 avhandlingar innehållade ordet InP-InAs.
1. Strain and Charge Transport in InAsP-InP and InP-InAs Core-Shell Nanowires
Sammanfattning : The mechanical, optical, and electrical properties of III-V semiconductor heterostructures are investigated in thisthesis. The semiconductor materials are grown by metal-organic vapor phase epitaxy, yielding wire shaped crystals(nanowires) having a length of ~ 1 μm and diameter of ~ 100 nm. LÄS MER
2. Charge transport in III-V narrow bandgap semiconductor nanowires
Sammanfattning : This thesis describes charge transport in III-V narrow bandgap semiconductor nanowires. We are particularly interested in quantum transport in InSb, InAs and InP-InAs core-shell nanowires. According to the type of transport mechanism dominating in the devices, this thesis can be divided into four parts. LÄS MER
3. Influence of Seed Particle Material, Preparation, and Dynamics on Nanowire Growth
Sammanfattning : Semiconducting nanowires have attracted scientific attention for more than 20 years due to their potential applications in electronic devices, as sensors, and in solid state lighting. These applications require high quality nanowires to begin with. LÄS MER
4. Electronic Structure Calculations of Point Defects in Semiconductors
Sammanfattning : In this thesis point defects in semiconductors are studied by electronic structure calculations. Results are presented for the stability and equilibrium concentrations of native defects in GaP, InP, InAs, and InSb, for the entire range of doping conditions and stoichiometry. LÄS MER
5. Advanced patterning and processing for III-V nanowire device fabrication
Sammanfattning : Semiconductor nanowires are widely considered as promising candidates for next generations of electronics and optoelectronics. Gold seed particles have so far been recognized as the most important catalyst for growth of nanowires. LÄS MER