Sökning: "wurtzite"

Visar resultat 1 - 5 av 55 avhandlingar innehållade ordet wurtzite.

  1. 1. Optical Spectroscopy of Single Nanowires

    Författare :Johanna Trägårdh; Fasta tillståndets fysik; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; core-shell nanowires; GaAs; InP; InAs; photocurrent; nanowire; time-resolved PL; photoluminescence; wurtzite;

    Sammanfattning : This thesis describes optical spectroscopy on III-V semiconductor nanowires. The nanowires were grown by metal-organic vapor phase epitaxy (MOVPE) and chemical beam epitaxy (CBE). LÄS MER

  2. 2. Optical studies of crystal phase heterostructures

    Författare :Irene Geijselaers; NanoLund: Center for Nanoscience; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; III-V semiconductor nanowires; photoluminescence; photoluminescence excitation; polytype; crystal phase heterostructure; InP; GaAs; wurtzite; Fysicumarkivet A:2021:Geijselaers;

    Sammanfattning : III-V semiconductors are commonly used for a variety of optical applications, such as LED based lights and solar sells. Most III-V semiconductors, such as GaAs and InP, exhibit the zinc-blende (zb) crystal structure, but in the form of nanowires it is also possible to create them in the wurtzite (wz) crystal structure. LÄS MER

  3. 3. Atomic Scale Characterization of III-V Nanowire Surfaces

    Författare :Johan Knutsson; NanoLund: Center for Nanoscience; []
    Nyckelord :III–V semiconductor materials; nanowire; surface; scanning tunneling microscopy; wurtzite; zinc blende; scanning tunneling spectroscopy; Fysicumarkivet A:2017:Knutsson;

    Sammanfattning : This dissertation focus on the atomic-scale characterization of the surface properties and electronic structure of III–V semiconductor nanowires (NWs). Since the early 2000s, the fabrication and characterization of III–V NWs has been a very significant topic within material science due to their potential for applications in lighting, energy harvesting, and electronics. LÄS MER

  4. 4. Optical Studies of Polytypism in GaAs Nanowires

    Författare :Neimantas Vainorius; NanoLund: Center for Nanoscience; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Photoluminescence; Raman scattering; Polytypism; Quantum confinement; GaAs nanowires; Fysicumarkivet A:2017:Vainorius;

    Sammanfattning : Semiconductor nanowires are often regarded as having potential to be building blocks for novel applications. Their geometry allows defect-free combinations of materials that have a high degree of lattice mismatch. III-V semiconductor nanowires can also be grown in the wurtzite crystal phase, which is not stable in bulk material or thin films. LÄS MER

  5. 5. From understanding to realizing novel III-Sb materials via nanowires

    Författare :Luna Namazi; NanoLund: Center for Nanoscience; []
    Nyckelord :Fysicumarkivet A:2018:Namazi;

    Sammanfattning : Due to their unique physical and material properties, III-Sb nanowires are considered good candidates for future devices, and test beds for understanding fundamental physics. Synthesizing these nanowires however is associated with certain challenging aspects, which are generally not present for other III-V nanowires, demanding the need for in depth investigations. LÄS MER