Sökning: "Doping Evaluation"
Visar resultat 1 - 5 av 13 avhandlingar innehållade orden Doping Evaluation.
1. Synchrotron X-ray based characterization of technologically relevant III-V surfaces and nanostructures
Sammanfattning : Innovative design and materials are needed to satisfy the demand for efficient and scalable devices for electronic and opto-electronic applications, such as transistors, LEDs, and solar cells. Nanostructured III-V semiconductors are an appealing solution, combining the excellent functional properties of III-V materials with the flexibility typical of nanostructures, such as the nanowires (NWs) studied here. LÄS MER
2. Electroactivity of conjugated polymers : A study of electrochemical doping and its applications
Sammanfattning : Electrochemical doping of conjugated polymers is a complex process, which forms the basis for both characterisation and applications of this class of materials. The high electron affinityof poly(quinoxaline vinylene)s and poly(pyridopyrazine)s, two types of polymers with potential use as electron acceptors in organic photodiodes, has been demonstrated with cyclic voltamrnetry. LÄS MER
3. Evaluation of NMR Knight shifts in metallic nanoparticles and topological matter
Sammanfattning : Elucidating the surface electron states of transition metal compounds is of primary importance in main heterogeneous catalytic processes, such as the hydrogen and oxygen evolution reactions. Key property in all these processes is the position of the energy of the d-band center relative to the Fermi-level of the catalyst; it must be shifted close to the Fermi level to achieve balance between adsorption and desorption of the catalyst and the adsorbate. LÄS MER
4. Hot-wall MOCVD for advanced GaN HEMT structures and improved p-type doping
Sammanfattning : The transition to energy efficient smart grid and wireless communication with improved capacity require the development and optimization of next generation semiconductor technologies and electronic device components. Indium nitride (InN), gallium nitride (GaN) and aluminum nitride (AlN) compounds and their alloys are direct bandgap semiconductors with bandgap energies ranging from 0. LÄS MER
5. Junction Engineering in Nanostructured Optoelectronic Devices
Sammanfattning : Semiconductor nanowires have proven to be promising building blocks for next-generation optoelectronic devices. The nanometric dimensions of nanowires provides strain relaxation capability, thus enabling the heteroepitaxy of III-V materials on silicon, as well as providing the possibility of realizing optoelectronic devices with lattice-mismatched material combinations. LÄS MER
