Sökning: "Photodetector"

Visar resultat 1 - 5 av 32 avhandlingar innehållade ordet Photodetector.

1. 1. Near-infrared photodetectors based on Si/SiGe nanostructures

   Författare :Anders Elfving; Wei-Xin Ni; Thomas P. Pearsall; Linköpings universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; SiGe; Ge dots; nanostructures; molecular beam epitaxy; photodetector; Semiconductor physics; Halvledarfysik;

   Sammanfattning : Two types of photodetectors containing Ge/Si quantum dots have been fabricated based on materials grown by molecular beam epitaxy and characterized with several experimental techniques. The aim was to study new device architectures with the implementation of Ge nanostructures, in order to obtain high detection efficiency in the near infrared range at room temperature. LÄS MER

3. 2. Broadband Receiver Electronic Circuits for Fiber-Optical Communication Systems

   Författare :Stavros Giannakopoulos; Chalmers tekniska högskola; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; photodetector; broadband amplifiers; data communication; VCSEL; distributed amplifiers.; receiver front-end; short-haul interconnects; InP DHBT; SiGe HBT; TIA;

   Sammanfattning : The exponential growth of internet traffic drives datacenters to constantly improve their capacity. As the copper based network infrastructure is being replaced by fiber-optical interconnects, new industrial standards for higher datarates are required. LÄS MER

4. 3. Type-II interband quantum dot photodetectors

   Författare :Oscar Gustafsson; Mattias Hammar; Wenquan Ma; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; photodetector; quantum dot; infrared; MOVPE; thermal imaging; type-II; photoluminescence; III V; InSb; InGaSb; InAs; SRA - ICT; SRA - Informations- och kommunikationsteknik;

   Sammanfattning : Photon detectors based on single-crystalline materials are of great interest for high performance imaging applications due to their low noise and fast response. The major detector materials for sensing in the long-wavelength infrared (LWIR) band (8-14 µm) are currently HgCdTe (MCT) and AlGaAs/GaAs quantum wells (QW) used in intraband-based quantum-well infrared photodetectors (QWIPs). LÄS MER

5. 4. Silicon Carbide High Temperature Photodetectors and Image Sensor

   Författare :Shuoben Hou; Mikael Östling; Carl-Mikael Zetterling; Per-Erik Hellström; Anthony O'Neill; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Carbide SiC ; high temperature; photodetector; photodiode; phototransistor; ultraviolet UV ; transistor-transistor logic TTL ; bipolar junction transistor BJT ; integrated circuit IC ; pixel sensor; image sensor; Informations- och kommunikationsteknik; Information and Communication Technology;

   Sammanfattning : Silicon Carbide (SiC) has the advantages of ultraviolet (UV) sensing and high temperature characteristics because of its wide band gap. Both merits make SiC photodetectors very attractive in astronomy, oil drilling, combustion detection, biology and medical applications. LÄS MER

7. 5. III-V Nanowire-based Infrared Photodetectors : Design, Fabrication and Characterization

   Författare :Vishal Jain; Fasta tillståndets fysik; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; nanowire; infrared; photodetector; APD; thermal imaging; telecommunication; fabrication; InP; InAsP; Fysicumarkivet A:2016:Jain;

   Sammanfattning : Semiconductors are the backbone of almost every electrical or optical component, one of them being photodetectors. Photodetectors are used in many applications such as digital cameras or solar panels. They can also be designed to detect the omnipresent infrared radiation, discovered in 1800, which is invisible to human eye. LÄS MER