Sökning: "High-Al barrier"

Hittade 3 avhandlingar innehållade orden High-Al barrier.

1. 1. Hot-wall MOCVD for advanced GaN HEMT structures and improved p-type doping

   Författare :Alexis Papamichail; Vanya Darakchieva; Anelia Kakanakova-Gueorguieva; Jr-Tai Chen; Zlatko Sitar; Linköpings universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Hot-wall MOCVD; III-nitrides; p-type GaN; HEMTs; Linearity; High-Al barrier;

   Sammanfattning : The transition to energy efficient smart grid and wireless communication with improved capacity require the development and optimization of next generation semiconductor technologies and electronic device components. Indium nitride (InN), gallium nitride (GaN) and aluminum nitride (AlN) compounds and their alloys are direct bandgap semiconductors with bandgap energies ranging from 0. LÄS MER

3. 2. Thermal conductivity of AlXGa1-XN and β-Ga2O3 semiconductors

   Författare :Dat Tran; Plamen Paskov; Vanya Darakchieva; Mattias Thorshell; Linköpings universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

   Sammanfattning : For the high-power (HP) electronic applications the existing Si-based devices have reached the performance limits governed by the material properties. Hence the device innovation itself is unable to enhance the overall performance. LÄS MER

4. 3. P-type and polarization doping of GaN in hot-wall MOCVD

   Författare :Alexis Papamichail; Vanya Darakchieva; Anelia Kakanakova-Gueorguieva; Jr-Tai Chen; Zhaoxia Bi; Linköpings universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

   Sammanfattning : The devolopment of group-III nitride semiconductor technology continues to expand rapidly over the last two decades. The indium nitride (InN), gallium nitride (GaN) and aluminum nitride (AlN) compounds and their alloys are direct bandgap semiconductors with a wide bandgap range, spanning from infrared(IR) to deep-ultraviolet (UV), enabling their utilization in optoelectronic industry. LÄS MER