Sökning: "high-k oxides"

Visar resultat 1 - 5 av 9 avhandlingar innehållade orden high-k oxides.

  1. 1. Surface Science Studies of Metal Oxides Formed by Chemical Vapour Deposition on Silicon

    Författare :Patrik Karlsson; Anders Sandell; Håkan Rensmo; Marcus Bäumer; Uppsala universitet; []
    Nyckelord :Physics; chemical vapour deposition; high-k; metal oxides; silicon; dye-solid interface; metal organic; electron spectroscopy; scanning tunnelling microscopy; Fysik;

    Sammanfattning : For an electronic device well-designed interfaces are critical for the performance. Studies of interfaces down to an atomic level are thus highly motivated both from a fundamental and technological point of view. LÄS MER

  3. 2. Silicon device substrate and channel characteristics influenced by interface properties

    Författare :Mikael Johansson; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; channel; attenuation; zro2; interface; traps; semi-insulating; high-k; mos; cross-talk; hfo2;

    Sammanfattning : This thesis is divided in two parts, one dealing with the depleted Si/Si structure, which is a substrate behaving as a semi-insulating material intended for radio-frequency applications and the other concerning high-k gate dielectrics (dielectrics with high dielectric constant) as the replacement for silicon dioxide as MOS gate dielectric.High frequency applications of CMOS integrated circuits, to lower cost, achieve higher performance and richer functionality, depends partly on the possibility to decrease the substrate coupling between different parts of the circuit. LÄS MER

  4. 3. Influence of Electron Charge States in Nanoelectronic Building Blocks

    Författare :Johan Piscator; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; silicon nanowire; conductance method; MOS; Schottky barrier lowering; CV; silicon on insulator SOI ; high-k; interface states; Schottky contacts; TSC.;

    Sammanfattning : The continued efforts to improve performance and decrease size of semiconductor logic devices are facing serious challenges. In order to further develop one of the most important nanoelectronic building blocks, the metal-oxide-semiconductor field-effect-transistor (MOSFET), several major problems have to be solved. LÄS MER

  5. 4. Charge carrier traffic at interfaces in nanoeletronic structures

    Författare :Bahman Raeissi; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; HfO2; oxide traps; High-k; interface states;

    Sammanfattning : This thesis describes investigations in relation to the search for materials with high dielectric constant, k, for future CMOS transistors. The most elementary quantities to be considered are k-value and energy band offsets between the dielectric and the silicon crystal on which it is deposited. LÄS MER

  7. 5. Electronic Properties of Metal Oxide Films Studied by Core Level Spectroscopy

    Författare :Jan Hinnerk Richter; Anders Sandell; Håkan Rensmo; Anne Borg; Uppsala universitet; []
    Nyckelord :Physics; electron spectroscopy; metal oxide; chemical vapour deposition; ion insertion; metal organic; band alignment; zirconium; titanium; silicon; high k; Fysik;

    Sammanfattning : In this dissertation core level electron spectroscopy has been employed to study various aspects of metal oxide films grown under ultra-high vacuum conditions. Studies on in situ ion insertion of lithium into thin TiO2 systems were performed. LÄS MER