Sökning: "4H-SiC"

Visar resultat 36 - 40 av 85 avhandlingar innehållade ordet 4H-SiC.

  1. 36. Novel Layered and 2D Materials for Functionality Enhancement of Contacts and Gas Sensors

    Författare :Hossein Fashandi; Per Eklund; Anita Lloyd Spetz; Mike Andersson; Lars Hultman; Ganpati Ramanath; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

    Sammanfattning : Chemical gas sensors are widely-used electronic devices for detecting or measuring the density levels of desired gas species. In this study, materials with established or potential applications for gas sensors are treated. LÄS MER

  3. 37. Bipolar Silicon Carbide Integrated Circuits for High Temperature Power Applications

    Författare :Saleh Kargarrazi; Carl-Mikael Zetterling; Erik Lind; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

    Sammanfattning : Silicon Carbide (SiC) is suggested as a superior material for high temperature and high power electronic applications, thanks to its excellent properties. In this thesis, design and measurements of integrated circuits in bipolar 4H-SiC aiming for high temperature power applications are reported. LÄS MER

  4. 38. Fabrication Technology for Efficient High Power Silicon Carbide Bipolar Junction Transistors

    Författare :Reza Ghandi; Martin Domeij; Anant Agarwal; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electrical engineering; electronics and photonics; Elektroteknik; elektronik och fotonik; Other engineering physics; Övrig teknisk fysik;

    Sammanfattning : The superior characteristics of Silicon Carbide as a wide band gap semiconductor have motivated many industrial and non-industrial research groups to consider SiC for the next generations of high power semiconductor devices. The SiC Bipolar Junction Transistor (BJT) is one candidate for high power applications due to its low on-state power loss and fast switching capability. LÄS MER

  5. 39. High growth rate epitaxy of SiC: growth processes and structural quality

    Författare :Mikael Syväjärvi; Robert F. Davis; Linköpings universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES;

    Sammanfattning : Silicon carbide (SiC) is a promising wide-bandgap semiconductor for applications such as high-power devices, high-voltage switches, high-temperature electronics and microwave components. The prospect of using this material is a large driving force for improving the material growth which is still quite immature in comparison with established semiconductor materials (e. LÄS MER

  7. 40. Growth and characterization of SiC and GaN

    Författare :Rafal Ciechonski; Erik Janzén; Sebastian Lourdudoss; Linköpings universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; SiC; GaN; Deep level transient spectroscopy; Minority Carrier Transient Spectroscopy; Hall effect; Cathodoluminescence; Scanning electron microscopy; Atomic Force microscopy; sublimation growth; MOCVD; heterostructures; High Electron Mobility transistor; point defects; Material physics with surface physics; Materialfysik med ytfysik;

    Sammanfattning : At present, focus of the SiC crystal growth development is on improving the crystalline quality without polytype inclusions, micropipes and the occurrence of extended defects. The purity of the grown material, as well as intentional doping must be well controlled and the processes understood. LÄS MER