Sökning: "Martin Domeij"

Hittade 4 avhandlingar innehållade orden Martin Domeij.

1. 1. Dynamic avalanche in Si and 4H-SiC power diodes

   Författare :Martin Domeij; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electrical engineering; electronics and photonics; Elektroteknik; elektronik och fotonik;

   Sammanfattning : Semiconductor power modules for the control of high currentsand high voltages have important applications in motor drives,traction and power transmission. Dynamic avalanche is of atechnological interest since it may limit the safe operatingarea for bipolar switching devices and for power diodes, whichare important integral parts of a power module. LÄS MER

3. 2. Licensavtalet och konkurrensrätten

   Författare :Carl Martin Gölstam; Torgny Håstad; Lars Pehrson; Bengt Domeij; Uppsala universitet; []
   Nyckelord :Private law; Competition Law; Antitrust Law; Intellectual property; Licensing; Licence agreement; Law and Economics; Patent; Know-how; Technology transfer; Civilrätt; Konkurrensrätt; Immaterialrätt; Licensavtal; Rättsekonomi; Patent; Know-how; Tekniköverföring; civilrätt; civilrätt;

   Sammanfattning : The purpose of this thesis is to describe and analyse the significance of economic thinking and arguments in the treatment of licence agreements in EC competition law. A central question is to what degree the concept of competition in EC law reflects an economically realistic approach to competition. LÄS MER

4. 3. Simulation and Characterization of Silicon Carbide Power Bipolar Junction Transistors

   Författare :Benedetto Buono; Mikael Östling; Gunnar Malm; Martin Domeij; Lothar Frey; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; silicon carbide; power device; BJT; diode; simulation; characterization; current gain; on-resistance; breakdown voltage; forward voltage drop; degradation; SRA - ICT; SRA - Informations- och kommunikationsteknik;

   Sammanfattning : The superior characteristics of silicon carbide, compared with silicon, have suggested considering this material for the next generation of power semiconductor devices. Among the different power switches, the bipolar junction transistor (BJT) can provide a very low forward voltage drop, a high current capability and a fast switching speed. LÄS MER

5. 4. Fabrication Technology for Efficient High Power Silicon Carbide Bipolar Junction Transistors

   Författare :Reza Ghandi; Martin Domeij; Anant Agarwal; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electrical engineering; electronics and photonics; Elektroteknik; elektronik och fotonik; Other engineering physics; Övrig teknisk fysik;

   Sammanfattning : The superior characteristics of Silicon Carbide as a wide band gap semiconductor have motivated many industrial and non-industrial research groups to consider SiC for the next generations of high power semiconductor devices. The SiC Bipolar Junction Transistor (BJT) is one candidate for high power applications due to its low on-state power loss and fast switching capability. LÄS MER