Sökning: "4H-SiC"
Visar resultat 21 - 25 av 85 avhandlingar innehållade ordet 4H-SiC.
21. Copper germanide schottky contacts to silicon and electrically active defects in n-type 6H-SiC and 4H-SiC epitaxial layers
Sammanfattning : Metallization for contacts to silicon devices presents amajor challenge as the linewidths are further reduced into thesub-micron regime. Copper germanide due to its relatively lowroom temperature resistivity ( ~ 10 µΩ - cm) has beenexamined as a potential contact metallixation. LÄS MER
22. CVD growth of SiC for high-power and high-frequency applications
Sammanfattning : Silicon Carbide (SiC) is a wide bandgap semiconductor that has attracted a lot of interest for electronic applications due to its high thermal conductivity, high saturation electron drift velocity and high critical electric field strength. In recent years commercial SiC devices have started to make their way into high and medium voltage applications. LÄS MER
23. Color Centers in Semiconductors for Quantum Applications : A High-Throughput Search of Point Defects in SiC
Sammanfattning : Point defects in semiconductors have been and will continue to be relevant for applications. Shallow defects realize transistors, which power the modern age of information, and in the not-too-distant future, deep-level defects could provide the foundation for a revolution in quantum information processing. LÄS MER
24. Nanostructured materials for gas sensing applications
Sammanfattning : In this Thesis I have investigated the use of nanostructured films as sensing and contact layers for field effect gas sensors in order to achieve high sensitivity, selectivity, and long term stability of the devices in corrosive environments at elevated temperatures. Electrochemically synthesized Pd and Au nanoparticles deposited as sensing layers on capacitive field effect devices were found to give a significant response to NOx with small, or no responses to H2, NH3, and C3H6. LÄS MER
25. Growth and Characterization of ZrB2 Thin Films
Sammanfattning : In this thesis, growth of ZrB2 thin films by direct current magnetron sputtering is investigatedusing a high vacuum industrial scale deposition system and an ultra-high vacuum laboratory scalesystem. The films were grown from ZrB2 compound targets at temperatures ranging from ambient (without external heating) to 900 °C and with substrate biases from -20 to -120 V. LÄS MER