Sökning: "Anant Agarwal"

Hittade 1 avhandling innehållade orden Anant Agarwal.

  1. 1. Fabrication Technology for Efficient High Power Silicon Carbide Bipolar Junction Transistors

    Författare :Reza Ghandi; Martin Domeij; Anant Agarwal; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electrical engineering; electronics and photonics; Elektroteknik; elektronik och fotonik; Other engineering physics; Övrig teknisk fysik;

    Sammanfattning : The superior characteristics of Silicon Carbide as a wide band gap semiconductor have motivated many industrial and non-industrial research groups to consider SiC for the next generations of high power semiconductor devices. The SiC Bipolar Junction Transistor (BJT) is one candidate for high power applications due to its low on-state power loss and fast switching capability. LÄS MER