Sökning: "4H-SiC"

Visar resultat 31 - 35 av 85 avhandlingar innehållade ordet 4H-SiC.

1. 31. Stacking Faults in Silicon Carbide

   Författare :Hisaomi Iwata; Friedhelm Bechstedt; Linköpings universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

   Sammanfattning : This PhD thesis comprises a series of theoretical studies on various stacking faults in silicon carbide polytypes, based on first-principles density functional modelling, which lead to a detailed insight into general electronic properties of stacking disordered system. This work is largely motivated by the discovery in 1999 by ABB Corporate Research of the electronic degradation phenomenon in 4H-SiC p-i-n diodes. LÄS MER

3. 32. Monte Carlo Simulations of Homogeneous and Inhomogeneous Transport in Silicon Carbide

   Författare :Mats Hjelm; KTH; []
   Nyckelord :simulation; Monte Carlo; SiC; charge transport; MOSFET; MESFET;

   Sammanfattning : The importance of simulation is increasing in the researchon semiconductor devices and materials. Simulations are used toexplore the characteristics of novel devices as well asproperties of the semiconductor materials that are underinvestigation, i.e. generally materials where the knowledge isinsufficient. LÄS MER

4. 33. Silicon Carbide Technology for High- and Ultra-High-Voltage Bipolar Junction Transistors and PiN Diodes

   Författare :Arash Salemi; Mikael Östling; Carl-Mikael Zetterling; Anders Hallen; Nando Kaminski; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Informations- och kommunikationsteknik; Information and Communication Technology;

   Sammanfattning : Silicon carbide (SiC) is an attractive material for high-voltage and high-temperature electronic applications owing to the wide bandgap, high critical electric field, and high thermal conductivity. High- and ultra-high-voltage silicon carbide bipolar devices, such as bipolar junction transistors (BJTs) and PiN diodes, have the advantage of a low ON-resistance due to conductivity modulation compared to unipolar devices. LÄS MER

5. 34. Silicon Carbide Growth by High Temperature CVD techniques

   Författare :Alexandre Ellison; Hiroyuki Matsunami; Linköpings universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

   Sammanfattning : Silicon Carbide (SiC) is a wide band gap semiconductor, which already W. Shockley in 1959 expected to replace silicon owing to its outstanding figures of merit for high-power, high-frequency and high-temperature electronics. LÄS MER

7. 35. Growth of 3C-SiC and Graphene for Solar Water-Splitting Application

   Författare :Yuchen Shi; Jianwu W. Sun; Rositsa Yakimova; Mikael Syväjärvi; Gholamreza Yazdi; Didier Chaussende; Linköpings universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

   Sammanfattning : Silicon carbide (SiC) is regarded as an important semiconductor for a variety of applications including high-temperature, high-power and high-frequency devices. The most common polytypes of SiC are hexagonal (4H- or 6H-SiC) and cubic silicon carbide (3C-SiC), which differ from each other by the ordering of the Si–C bilayers along the c-axis crystal direction. LÄS MER