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Visar resultat 1 - 5 av 85 avhandlingar som matchar ovanstående sökkriterier.
1. Design Optimization and Realization of 4H-SiC Bipolar Junction Transistors
Sammanfattning : 4H-SiC-based bipolar junction transistors (BJTs) are attractive devices for high-voltage and high-temperature operations due to their high current capability, low specific on-resistance, and process simplicity. To extend the potential of SiC BJTs to power electronic industrial applications, it is essential to realize high-efficient devices with high-current and low-loss by a reliable and wafer-scale fabrication process. LÄS MER
2. Carrieer transport in 4H-SiC
Sammanfattning : .... LÄS MER
3. Radiation Hardness of 4H-SiC Devices and Circuits
Sammanfattning : Advances in space and nuclear technologies are limited by the capabilities of the conventional silicon (Si) electronics. Hence, there is a need to explore materials beyond Si with enhanced properties to operate in extreme environments. In this regards, silicon carbide (4H-SiC), a wide bandgap semiconductor, provides suitable solutions. LÄS MER
4. Device characteristics of sublimation grown 4H-SiC layers
Sammanfattning : At present, focus of the SiC crystal growth development is on improving the crystalline quality without polytype inclusions, micropipes and the occurrence of extended defects. The purity of the grown material, as well as intentional doping must be well controlled and the processes understood. LÄS MER
5. Impact of Ionizing Radiation on 4H-SiC Devices
Sammanfattning : Electronic components, based on current semiconductor technologies and operating in radiation rich environments, suffer degradation of their performance as a result of radiation exposure. Silicon carbide (SiC) provides an alternate solution as a radiation hard material, because of its wide bandgap and higher atomic displacement energies, for devices intended for radiation environment applications. LÄS MER