Sökning: "tcad"

Visar resultat 6 - 10 av 10 avhandlingar innehållade ordet tcad.

  1. 6. Design and Characterization of RF-Power LDMOS Transistors

    Författare :Olof Bengtsson; Jörgen Olsson; Lars Vestling; Claes Beckman; Olof Tornblad; Uppsala universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Power Amplifiers; LDMOS transistors; RF-power; IMD; Technology CAD; Load-Pull; Electronics; Elektronik;

    Sammanfattning : In mobile communication new applications like wireless internet and mobile video have increased the demand of data-rates. Therefore, new more wideband systems are being implemented. LÄS MER

  3. 7. Vertical III-V Nanowire Tunnel Field-Effect Transistor

    Författare :Elvedin Memisevic; Nanoelektronik; []
    Nyckelord :Transistor; TFET; Steep slope; Nanowire; III-V materials; HSQ; Vertical; InAs; GaSb; MOSFET;

    Sammanfattning : In this thesis fabrication and optimization of vertical III-V Tunneling Field-Effect transistors was explored. Usage of vertical nanowires, allows for combination of materials with large lattice mismatch in the same nanowire structure. LÄS MER

  4. 8. Wide Bandgap Semiconductor (SiC & GaN) Power Amplifiers in Different Classes

    Författare :Sher Azam; Qamar Wahab; Jörgen Olsson; Linköpings universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Wide bandgap; SiC; MESFET; GaN; HEMT; Power Amplifiers; Materials science; Teknisk materialvetenskap;

    Sammanfattning : SiC MESFETs and GaN HEMTs have an enormous potential in high-power amplifiers at microwave frequencies due to their wide bandgap features of high electric breakdown field strength, high electron saturation velocity and high operating temperature. The high power density combined with the comparably high impedance attainable by these devices also offers new possibilities for wideband power microwave systems. LÄS MER

  5. 9. Design, Fabrication and Characterization of GaN HEMTs for Power Switching Applications

    Författare :Björn Hult; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; DCIT; SCE; high voltage; isolation; ‘buffer-free’; gate dielectric; GaN HEMT; passivation; DIBL;

    Sammanfattning : The unique properties of the III-nitride heterostructure, consisting of gallium nitride (GaN), aluminium nitride (AlN) and their ternary compounds (e.g. AlGaN, InAlN), allow for the fabrication of high electron mobility transistors (HEMTs). LÄS MER

  7. 10. Microwave Power Devices and Amplifiers for Radars and Communication Systems

    Författare :Sher Azam; Qamar ul Wahab; Erik Janzén; Georg Boeck; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Semiconductor physics; Halvledarfysik;

    Sammanfattning : SiC MESFETs and GaN HEMTs posses an enormous potential in power amplifiers at microwave frequencies due to their wide bandgap features of high electric field strength, high electron saturation velocity and high operating temperature. The high power density combined with the comparably high impedance attainable by these devices also offers new possibilities for wideband power microwave systems. LÄS MER