Sökning: "LDMOS transistors"

Visar resultat 1 - 5 av 11 avhandlingar innehållade orden LDMOS transistors.

1. 1. Large-Signal Modeling of Microwave Transistors

   Författare :Lars Bengtsson; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; large-signal; HEMT; non-linear models; de-embedding; high-efficiency; class-E amplifier; LDMOS; HBT; HFET; model parameter extraction; microwave transistors;

   Sammanfattning : The development of computer aided design tools for microwave circuit design has increased the interest for accurate transistor models. The circuit complexity has grown as the CAD tools have been improved and the need to predict how non-linear circuits behave has also been increased. LÄS MER

3. 2. Design and Characterization of RF-Power LDMOS Transistors

   Författare :Olof Bengtsson; Jörgen Olsson; Lars Vestling; Claes Beckman; Olof Tornblad; Uppsala universitet; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Power Amplifiers; LDMOS transistors; RF-power; IMD; Technology CAD; Load-Pull; Electronics; Elektronik;

   Sammanfattning : In mobile communication new applications like wireless internet and mobile video have increased the demand of data-rates. Therefore, new more wideband systems are being implemented. LÄS MER

4. 3. Design and Characterization of RF-LDMOS Transistors and Si-on-SiC Hybrid Substrates

   Författare :Sara Lotfi; Jörgen Olsson; Örjan Vallin; Jean-Pierre Raskin; Uppsala universitet; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; LDMOS; RF; losses; crosstalk; silicon carbide; Si-on-SiC hybrid substrate; wafer bonding; CMOS; Teknisk fysik med inriktning mot elektronik; Engineering Science with specialization in Electronics;

   Sammanfattning : With increasing amount of user data and applications in wireless communication technology, demands are growing on performance and fabrication costs. One way to decrease cost is to integrate the building blocks in an RF system where digital blocks and high power amplifiers then are combined on one chip. LÄS MER

5. 4. High Frequency Analysis of LDMOS Transistors

   Författare :Johan Ankarcrona; Uppsala universitet; []
   Nyckelord :;

   Sammanfattning : .... LÄS MER

7. 5. High Frequency Analysis of Silicon RF MOS Transistors

   Författare :Johan Ankarcrona; Jörgen Olsson; Kjell Jeppson; Uppsala universitet; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electronics; RF-power; LDMOS; Microwave transistor; SOI; Silicon; MOSFET; Elektronik; Electronics; Elektronik;

   Sammanfattning : Today, the silicon technology is well established for RF-applications (f~1-100 GHz), with emphasis on the lower frequencies (f < 5 GHz). The field of RF power devices is extensive concerning materials and devices. One of the important RF-devices is the silicon LDMOS transistor. LÄS MER