Sökning: "Steep slope"

Visar resultat 1 - 5 av 18 avhandlingar innehållade orden Steep slope.

1. 1. Vertical III-V Nanowire Transistors for Low-Power Electronics

   Författare :Abinaya Krishnaraja; Nanoelektronik; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; metal-oxide-semiconductor field-effect transistor MOSFET ; Steep slope; Tunnel Field-Effect Transistors; Vertical nanowire; III-V materials; semiconducting III-V; InAs; GaSb; InGaAsSb; PMOS; Transistor; Electronics;

   Sammanfattning : Power dissipation has been the major challenge in the downscaling of transistor technology. Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) have struggled to keep a low power consumption while still maintaining a high performance due to the low carrier mobilities of Si but also due to their inherent minimum inverse subthreshold slope (S ≥ 60 mV/dec) which is limited by thermionic emission. LÄS MER

3. 2. Vertical III-V Nanowire Tunnel Field-Effect Transistor

   Författare :Elvedin Memisevic; Nanoelektronik; []
   Nyckelord :Transistor; TFET; Steep slope; Nanowire; III-V materials; HSQ; Vertical; InAs; GaSb; MOSFET;

   Sammanfattning : In this thesis fabrication and optimization of vertical III-V Tunneling Field-Effect transistors was explored. Usage of vertical nanowires, allows for combination of materials with large lattice mismatch in the same nanowire structure. LÄS MER

4. 3. Vertical III-V Nanowire Tunnel Field-Effect Transistors : A Circuit Perspective

   Författare :Gautham Rangasamy; Nanoelektronik; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Low-Power Electronics; Self-Heating; Steep Slope Devices; Tunnel Field-Effect Transistors; Vertical Nanowire; III-V Semiconductors;

   Sammanfattning : The energy scaling of integrated circuits has reached its limit because the operating voltage of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFET) based switches has reached its minimum value. MOSFETs are limited by thermionic emission and cannot achieve a subthreshold swing (SS) below 60 mV/decade at room temperature. LÄS MER

5. 4. Kinematics and Internal Deformation of Granular Slopes

   Författare :Zhina Liu; Hemin Koyi; Dominique Frizon de Lamotte; Uppsala universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; granular flow; kinematics; internal deformation; particle flow method; analogue modeling; natural landslides; Geovetenskap med inriktning mot mineralogi; petrologi och tektonik; Earth Science with specialization in Mineral Chemistry; Petrology and Tectonics;

   Sammanfattning : Flow-like mass movement is the most destructive landslide and causes loss of lives and substantial property damage throughout the world every year. This thesis focuses on the spatial and temporal changes of the mass movement in terms of velocity and displacement within the failure mass, and the spatial and temporal distribution of the three dimensional internal deformation of the granular slopes using discrete element method, physical experiments, and natural landslides. LÄS MER

7. 5. Modeling Carbon Nanotube Field Effect Transistors with Fixed and Suspended Nanotube Gates

   Författare :Yury Tarakanov; Chalmers tekniska högskola; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

   Sammanfattning : Carbon nanotubes (CNT) exhibit a range of properties that make them well suited for nanoelectronic and nanoelectromechanical devices. One-dimensional field effect transistors based on single-walled CNTs have demonstrated excellent electrical characteristics and are competitive with silicon-based solutions, and oscillators based on suspended CNTs have been shown to work at gigahertz frequencies with Q-factors exceeding 10$^3$. LÄS MER