Sökning: "Load-Pull"

Visar resultat 1 - 5 av 18 avhandlingar innehållade ordet Load-Pull.

  1. 1. Design and Characterization of RF-Power LDMOS Transistors

    Författare :Olof Bengtsson; Jörgen Olsson; Lars Vestling; Claes Beckman; Olof Tornblad; Uppsala universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Power Amplifiers; LDMOS transistors; RF-power; IMD; Technology CAD; Load-Pull; Electronics; Elektronik;

    Sammanfattning : In mobile communication new applications like wireless internet and mobile video have increased the demand of data-rates. Therefore, new more wideband systems are being implemented. LÄS MER

  3. 2. Optimization of LDMOS Transistor in Power Amplifiers for Communication Systems

    Författare :Ahsan-Ullah Kashif; Qamar-ul Wahab; Christer Svensson; Joachim Wurfl; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; RF-LDMOS; power amplifiers; technology CAD; load-pull; non-linear analysis; and switching analysis; Semiconductor physics; Halvledarfysik;

    Sammanfattning : The emergence of new communication standards has put a key challenge for semiconductor industry to develop RF devices that can handle high power and high data rates simultaneously. The RF devices play a key role in the design of power amplifiers (PAs), which is considered as a heart of base-station. LÄS MER

  4. 3. Microwave and millimeter wave CMOS Characterization, modeling, and design

    Författare :Mattias Ferndahl; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; load-pull; microwave; large-signal; silicon; characterization; modeling; balun; LSNA; frequency doubler; millimeter wave; power amplifier; CMOS;

    Sammanfattning : The use of CMOS technologies for microwave and millimeter wave applications has recently been made possible as a result of increased transistor performance. The fT and fmax have, for example, passed 100 GHz at the 130 nm node and 200 GHz at the 65 nm node. LÄS MER

  5. 4. Nonlinear Characterisation and Modelling of Microwave Semiconductor Devices

    Författare :Mattias Thorsell; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; noise modelling; nonlinear measurement; active load-pull; noise measurement; thermal characterisation; AlGaN GaN HEMT; nonlinear modelling;

    Sammanfattning : There is an increasing need for more accurate models taking into account the nonlinearities and memory effects of microwave transistors. The memory effects are especially important for transistor technologies suffering from relatively large low frequency dispersion, such as GaN baed HEMTs. LÄS MER

  7. 5. Nonlinear Microwave Measurement Architectures for Wideband Device Characterization

    Författare :Sebastian Gustafsson; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Nonlinear characterization; wideband; GaN HEMT; oscilloscope; microwave; active load-pull;

    Sammanfattning : The global surge for ubiquitous mobile communication requiring high speed and high capacity cellular networks has resulted in a golden age for the development of wireless technology. Modern cellular standards employ complex modulation formats with wider signal bandwidths to cope with the growing demand. LÄS MER