Sökning: "TFET"

Visar resultat 1 - 5 av 7 avhandlingar innehållade ordet TFET.

1. 1. Vertical III-V Nanowire Tunnel Field-Effect Transistor

   Författare :Elvedin Memisevic; Nanoelektronik; []
   Nyckelord :Transistor; TFET; Steep slope; Nanowire; III-V materials; HSQ; Vertical; InAs; GaSb; MOSFET;

   Sammanfattning : In this thesis fabrication and optimization of vertical III-V Tunneling Field-Effect transistors was explored. Usage of vertical nanowires, allows for combination of materials with large lattice mismatch in the same nanowire structure. LÄS MER

3. 2. Electrical Characterisation of III-V Nanowire MOSFETs

   Författare :Markus Hellenbrand; Institutionen för elektro- och informationsteknik; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MOSFET; TFET; III-V; Nanowire; Hysteresis; Low-Frequency Noise; Random Telegraph Noise; cryogenic; Reliability; Radio Frequency; Small-Signal Model;

   Sammanfattning : The ever increasing demand for faster and more energy-efficient electricalcomputation and communication presents severe challenges for the semiconductor industry and particularly for the metal-oxidesemiconductorfield-effect transistor (MOSFET), which is the workhorse of modern electronics. III-V materials exhibit higher carrier mobilities than the most commonly used MOSFET material Si so that the realisation of III-V MOSFETs can enable higher operation speeds and lower drive voltages than that which is possible in Si electronics. LÄS MER

4. 3. Vertical III-V Nanowire Transistors for Low-Power Electronics

   Författare :Abinaya Krishnaraja; Nanoelektronik; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; metal-oxide-semiconductor field-effect transistor MOSFET ; Steep slope; Tunnel Field-Effect Transistors; Vertical nanowire; III-V materials; semiconducting III-V; InAs; GaSb; InGaAsSb; PMOS; Transistor; Electronics;

   Sammanfattning : Power dissipation has been the major challenge in the downscaling of transistor technology. Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) have struggled to keep a low power consumption while still maintaining a high performance due to the low carrier mobilities of Si but also due to their inherent minimum inverse subthreshold slope (S ≥ 60 mV/dec) which is limited by thermionic emission. LÄS MER

5. 4. Integration of Ferroelectric HfO2 onto a III-V Nanowire Platform

   Författare :Anton E. O. Persson; Nanoelektronik; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; ferroelectricity; ferroelectric FET; ferroelectric tunnel junction; tunnel field effect transistors; HZO; III-V; nanowire;

   Sammanfattning : The discovery of ferroelectricity in CMOS-compatible oxides, such as doped hafnium oxide, has opened new possibilities for electronics by reviving the use of ferroelectric implementations on modern technology platforms. This thesis presents the ground-up integration of ferroelectric HfO2 on a thermally sensitive III-V nanowire platform leading to the successful implementation of ferroelectric transistors (FeFETs), tunnel junctions (FTJs), and varactors for mm-wave applications. LÄS MER

7. 5. Low-Power Nanowire Circuits and Transistors

   Författare :Anil Dey; Institutionen för elektro- och informationsteknik; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

   Sammanfattning : This thesis explores several novel material systems and innovative device concepts enabled by nanowire technology. State-of-the-art fabrication techniques such as electron beam lithography and atomic layer deposition are utilized to achieve high control and quality in the device fabrication. LÄS MER