Sökning: "passivation characterization"

Visar resultat 11 - 15 av 29 avhandlingar innehållade orden passivation characterization.

  1. 11. Electrical Characterization of III-V Nanostructure

    Författare :Aein Shiri Babadi; Institutionen för elektro- och informationsteknik; []
    Nyckelord :High-κ; Metal-Oxide-Semicondcutor capacitors; MOSCAPs; III-V semiconductors; InAs; GaSb; interface traps; border traps; C-V; Simulations; Nanowire; MOSFET; Fabrication;

    Sammanfattning : This thesis investigates the electronic properties of a number of novel III-V materials and material combinations for transistor applications. In particular, high-κ/InAs metal-oxide-semiconductor (MOS) structures and transport properties of GaSb nanowires have been studied. LÄS MER

  3. 12. Growth and Characterization of Tandem-Junction Photovoltaic Nanowires

    Författare :Lukas Hrachowina; NanoLund: Centre for Nanoscience; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; III–V semiconductors; nanowire; photovoltaics; tandem junction; MOVPE; EBIC; Fysicumarkivet A:2022:Hrachowina;

    Sammanfattning : In order to satisfy the growing energy needs of our planet’s population, and at the same time mitigate global warming, sustainable energy sources such as solar energy are indispensable. In addition to conventional silicon-based solar cells, nanotechnology offers interesting approaches for complementary applications. LÄS MER

  4. 13. Ultrathin Oxides in Metal-Oxide-Silicon Structures: Defects and Characterization

    Författare :Lars-Åke Ragnarsson; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; PMA; interface state densities; silicon; aluminum oxide; Pb; ultrathin; RPECVD; MOS;

    Sammanfattning : The properties of metal-oxide-silicon (MOS) structures with ultrathin oxide layers (15-30 Å) have been investigated by means of electrical characterization. The characterization methods used were mainly capacitance voltage (C-V), current voltage (I-V) and constant voltage stress (I-t) measurements. LÄS MER

  5. 14. The Multiple Faces of Interfaces : Electron microscopy analysis of CuInSe2 thin-film solar cells

    Författare :Olivier Donzel-Gargand; Marika Edoff; Lionel Fourdrinier; Thomas Thersleff; Daniel Abou-Ras; Uppsala universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electron microscopy; TEM; STEM; EELS; EDS; solar cells; CIGS; ACIGS; CZTS; post deposition treatment; KF; RbF; buffer layers; interfaces; inter layers; barrier layers; passivation layers; Teknisk fysik med inriktning mot materialvetenskap; Engineering Science with specialization in Materials Science; Teknisk fysik med inriktning mot elektronik; Engineering Science with specialization in Electronics;

    Sammanfattning : The CIS solar cell family features both a high stability and world-class performances. They can be deposited on a wide variety of substrates and absorb the entire solar spectrum only using a thickness of a few micrometers. LÄS MER

  7. 15. Optical characterization of dilute nitride semiconductors and related quantum structures

    Författare :Morteza Izadifard; G. Yu. Rudko; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Dilute nitrides; optoelectronics; photonics; Optical physics; Optisk fysik;

    Sammanfattning : Dilute nitrides (i.e. LÄS MER