Sökning: "interface state densities"
Visar resultat 1 - 5 av 15 avhandlingar innehållade orden interface state densities.
1. Ultrathin Oxides in Metal-Oxide-Silicon Structures: Defects and Characterization
Sammanfattning : The properties of metal-oxide-silicon (MOS) structures with ultrathin oxide layers (15-30 Å) have been investigated by means of electrical characterization. The characterization methods used were mainly capacitance voltage (C-V), current voltage (I-V) and constant voltage stress (I-t) measurements. LÄS MER
2. Vibrational Sum Frequency Spectroscopy Studies at the Air-Liquid Interface
Sammanfattning : In this thesis the structure and hydration of small organic and amphipilic compounds adsorbed at the air-liquid interface, have been studied using the nonlinear optical technique Vibrational Sum Frequency Spectroscopy (VSFS). The second order nature of the sum frequency process makes this technique particularly surface sensitive and very suitable for interfacial studies, as molecules at the surface can be distinguished even in the presence of a vast excess of the same molecules in the bulk. LÄS MER
3. Electrical Characterization of III-V Nanostructure
Sammanfattning : This thesis investigates the electronic properties of a number of novel III-V materials and material combinations for transistor applications. In particular, high-κ/InAs metal-oxide-semiconductor (MOS) structures and transport properties of GaSb nanowires have been studied. LÄS MER
4. Exploring the Frontiers of Polymer Electrolytes for Battery Applications : From Surface to Bulk
Sammanfattning : Lithium-ion batteries have dominated the market since their inception in 1991 due to their unparalleled energy and power densities, but are now faced with new challenges. Growing demand for battery materials for energy intense applications and large-scale interim energy storage have emphasized the need for safe and sustainable battery electrolytes. LÄS MER
5. Simulation and Electrical Evaluation of 4H-SiC Junction Field Effect Transistors and Junction Barrier Schottky Diodes with Buried Grids
Sammanfattning : Silicon carbide (SiC) has higher breakdown field strength than silicon (Si), which enables thinner and more highly doped drift layers compared to Si. Consequently, the power losses can be reduced compared to Si-based power conversion systems. Moreover, SiC allows the power conversion systems to operate at high temperatures up to 250 oC. LÄS MER