Sökning: "RPECVD"

Hittade 2 avhandlingar innehållade ordet RPECVD.

1. 1. Ultrathin Oxides in Metal-Oxide-Silicon Structures: Defects and Characterization

   Författare :Lars-Åke Ragnarsson; Chalmers tekniska högskola; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; PMA; interface state densities; silicon; aluminum oxide; Pb; ultrathin; RPECVD; MOS;

   Sammanfattning : The properties of metal-oxide-silicon (MOS) structures with ultrathin oxide layers (15-30 Å) have been investigated by means of electrical characterization. The characterization methods used were mainly capacitance voltage (C-V), current voltage (I-V) and constant voltage stress (I-t) measurements. LÄS MER

3. 2. Deposition of high quality thin dielectrics on silicon

   Författare :Lars-Åke Ragnarsson; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; oxynitride; metal-oxide-semiconductor capacitors; RPECVD; silicon dioxide; interfaces; si-SiO2; remote plasma-enhanced CVD; ONO; C-V; nitrided interfaces; SiO2; deposited dielectrics;

   Sammanfattning : .... LÄS MER