Sökning: "low noise"

Visar resultat 21 - 25 av 816 avhandlingar innehållade orden low noise.

  1. 21. InP High Electron Mobility Transistors for Cryogenic Low-Noise and Low-Power Amplifiers

    Författare :Eunjung Cha; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; indium channel content; electrical stability.; dc power dissipation; noise temperature; scaling; low-noise amplifier LNA ; InP high-electron mobility transistor InP HEMT ; cryogenic;

    Sammanfattning : The InAlAs/InGaAs/InP high-electron mobility transistor (InP HEMT) is the preferred low-noise device in cryogenic low-noise amplifiers (LNAs) operating at 5-15 K. Such LNAs are utilized in microwave and millimeter-wave detection in radio astronomy. LÄS MER

  3. 22. Noise and music : a matter of risk perception

    Författare :Stephen E. Widén; Högskolan Väst; []
    Nyckelord :SAMHÄLLSVETENSKAP; SOCIAL SCIENCES; Adolescents; Tinnitus; Noise sensitivity; Socio-economic status; Attitudes; Use of hearing protection; Risk behaviour; Risk-consideration; Self-image; Norms and Ideals; Psychology; Psykologi; Psychology; Psykologi; Adolescents; Tinnitus; Noise sensitivity; Socio-economic status; Attitudes; Use of;

    Sammanfattning : The prevalence of tinnitus and hearing impairments among adolescents seems to increase as a consequence of exposure to loud noise. Several studies have highlighted the negative auditory effects of exposure to loud music at concerts and discotheques, environments in which young people today spend considerable periods of time. LÄS MER

  4. 23. Low-Frequency Noise in Si-Based High-Speed Bipolar Transistors

    Författare :Martin Sandén; KTH; []
    Nyckelord :bipolar junction transistor BJT ; heterojunction bipolar transistor HBT ; silicon-germanium SiGe ; polysilicon emitter; high-frequency measurement; low-frequency noise; noise modeling; hydrogen passivation; voltage controlled oscillator VCO ; pha;

    Sammanfattning : .... LÄS MER

  5. 24. Cryogenic Ultra-Low Noise InP High Electron Mobility Transistors

    Författare :Joel Schleeh; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MMIC; LNA; cryogenic; low noise; DC power dissipation; ALD; GaAs MHEMT; gain fluctuations; InP HEMT;

    Sammanfattning : Indium phosphide high electron mobility transistors (InP HEMTs), are today the best transistors for cryogenic low noise amplifiers at microwave frequencies. Record noise temperatures below 2 K using InP HEMT equipped cryogenic low noise amplifiers (LNAs) were demonstrated already a decade ago. LÄS MER

  7. 25. Modelling of low frequency sound in duct networks

    Författare :Stefan Nygård; KTH; []
    Nyckelord :Duct pipe; System network; Wave-guide; Flow; Sound; Noise; Fluid machine; 2-port; 1-port; Active; Passive; Flow separation; Code; Simulation; Low frequency;

    Sammanfattning : .... LÄS MER