Sökning: "low noise"

Visar resultat 31 - 35 av 816 avhandlingar innehållade orden low noise.

1. 31. Low-Power HEMT LNAs for Quantum Computing

   Författare :Yin Zeng; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; low-noise amplifier; qubit; Cryogenic; InP HEMT.; quantum computing; low-power;

   Sammanfattning : The rapid development of quantum computing technology predicts much more qubits to handle in the detection, readout, and amplification of qubits than in today's system. Due to the limited cooling capability of the dilution refrigerator, the current low-noise amplifiers (LNAs) are in need of ten to hundred times reduced dc power consumption yet with lowest noise temperature at qubit readout frequencies, typcially 4-12 GHz. LÄS MER

3. 32. Modeling and Estimation of Phase Noise in Oscillators with Colored Noise Sources

   Författare :M Reza Khanzadi; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Phase Noise Model; Bayesian Cramer-Rao Bound; Voltage-controlled Oscillator; Extended Kalman Filter Smoother; Maximum a Posteriori Estimator; Colored Phase Noise; Oscillator Phase Noise; Phase-Locked Loop; Mean Square Error.;

   Sammanfattning : The continuous increase in demand for higher data rates due to applications with massive number of users motivates the design of faster and more spectrum efficient communication systems. In theory, the current communication systems must be able to operate close to Shannon capacity bounds. LÄS MER

4. 33. Low-frequency noise in high-k gate stacks with interfacial layer engineering

   Författare :Maryam Olyaei; Bengt Gunnar Malm; Paolo Pavan; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; CMOS; high k; 1 f noise; low-frequency noise; number fluctuations; mobility fluctuat ions; traps; interfacial layer; TmSiO; Tm 2O3; Informations- och kommunikationsteknik; Information and Communication Technology;

   Sammanfattning : The rapid progress of complementary-metal-oxide-semiconductor (CMOS) integrated circuit technology became feasible through continuous device scaling. The implementation of high-k/metal gates had a significantcontribution to this progress during the last decade. However, there are still challenges regarding the reliability of these devices. LÄS MER

5. 34. Silicon Nanowire Field-Effect Devices as Low-Noise Sensors

   Författare :Xi Chen; Zhen Zhang; Shi-Li Zhang; Si Chen; Fengnian Xia; Uppsala universitet; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon nanowire; field-effect transistor; Schottky junction gate; low frequency noise; ion sensor; Teknisk fysik med inriktning mot elektronik; Engineering Science with specialization in Electronics;

   Sammanfattning : In the past decades, silicon nanowire field-effect transistors (SiNWFETs) have been explored for label-free, highly sensitive, and real-time detections of chemical and biological species. The SiNWFETs are anticipated for sensing analyte at ultralow concentrations, even at single-molecule level, owing to their significantly improved charge sensitivity over large-area FETs. LÄS MER

7. 35. Low Voltage CMOS Radio Receiver Front-End Design

   Författare :Fred Tillman; Institutionen för elektro- och informationsteknik; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Elektroteknik; Electrical engineering; Elektronik; Electronics; Elektronik och elektroteknik; Electronics and Electrical technology; Polyphase Filter; Quadrature Signals; Nonlinearity; Distortion; Passive Mixer; Mixer; Low Noise Amplifier; CMOS; Front-End; Low Voltage; Radio; Receiver;

   Sammanfattning : The mass production of integrated circuits for digital electronics has made CMOS technology the most frequently used IC process today. Thanks to the large production volume, CMOS has increasingly become the most cost efficient technology of choice, and the fast development of small, high speed CMOS devices has made the technology feasible for many RF applications. LÄS MER