Sökning: "dc power dissipation"

Visar resultat 1 - 5 av 8 avhandlingar innehållade orden dc power dissipation.

  1. 1. InP High Electron Mobility Transistors for Cryogenic Low-Noise and Low-Power Amplifiers

    Författare :Eunjung Cha; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; indium channel content; electrical stability.; dc power dissipation; noise temperature; scaling; low-noise amplifier LNA ; InP high-electron mobility transistor InP HEMT ; cryogenic;

    Sammanfattning : The InAlAs/InGaAs/InP high-electron mobility transistor (InP HEMT) is the preferred low-noise device in cryogenic low-noise amplifiers (LNAs) operating at 5-15 K. Such LNAs are utilized in microwave and millimeter-wave detection in radio astronomy. LÄS MER

  3. 2. Low-Power HEMT LNAs for Quantum Computing

    Författare :Yin Zeng; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; low-noise amplifier; qubit; Cryogenic; InP HEMT.; quantum computing; low-power;

    Sammanfattning : The rapid development of quantum computing technology predicts much more qubits to handle in the detection, readout, and amplification of qubits than in today's system. Due to the limited cooling capability of the dilution refrigerator, the current low-noise amplifiers (LNAs) are in need of ten to hundred times reduced dc power consumption yet with lowest noise temperature at qubit readout frequencies, typcially 4-12 GHz. LÄS MER

  4. 3. Ultra-Low Noise InP HEMTs for Cryogenic Amplification

    Författare :Joel Schleeh; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; cryogenic; DC power dissipation; MMIC; LNA; InP HEMT; ALD;

    Sammanfattning : InGaAs/InAlAs/InP High Electron Mobility Transistors (InP HEMTs), are today the best devices to design cryogenic low noise amplifiers. However, reported progress in reducing the noise has been slow in the last decade. LÄS MER

  5. 4. Cryogenic Ultra-Low Noise InP High Electron Mobility Transistors

    Författare :Joel Schleeh; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MMIC; LNA; cryogenic; low noise; DC power dissipation; ALD; GaAs MHEMT; gain fluctuations; InP HEMT;

    Sammanfattning : Indium phosphide high electron mobility transistors (InP HEMTs), are today the best transistors for cryogenic low noise amplifiers at microwave frequencies. Record noise temperatures below 2 K using InP HEMT equipped cryogenic low noise amplifiers (LNAs) were demonstrated already a decade ago. LÄS MER

  7. 5. InAs/AlSb HEMTs for Cryogenic Low-Noise Applications

    Författare :Giuseppe Moschetti; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; cryogenic; metamorphic; high frequency; high electron mobility transistor HEMT ; low power; low noise.; InAs AlSb;

    Sammanfattning : The InAs/AlSb high electron mobility transistor (HEMT) is an emerging microwave device technology. The high electron mobility and high peak electron velocity of the InAs channel makes this device technology a potential candidate for low-noise applications operating at very low power dissipation. LÄS MER