Sökning: "low-noise amplifier LNA"
Visar resultat 1 - 5 av 23 avhandlingar innehållade orden low-noise amplifier LNA.
Sammanfattning : Gallium nitride (GaN) high electron mobility transistor (HEMT) has been introduced as the technology of choice for high power microwave applications due to its material properties including high saturation electron velocity and breakdown field together with excellent thermal conductivity and robustness.It is also a promising candidate for receiver front-ends in the radio base station(RBS) where low noise figure and high linearity are key issues for low noiseamplifier (LNA) design. LÄS MER
Sammanfattning : In most radio astronomy instrumentation, cryogenic low noise amplifiers (LNA) are used as intermediate frequency (IF) amplifiers. The system noise temperature is among the most important parameters of a receiver and requires state of the art components. LÄS MER
Sammanfattning : InGaAs/InAlAs/InP High Electron Mobility Transistors (InP HEMTs), are today the best devices to design cryogenic low noise amplifiers. However, reported progress in reducing the noise has been slow in the last decade. LÄS MER
Sammanfattning : The low-noise amplifier (LNA) remains a critical block in every receiver front-end. As the development of the widcband, low-power and low-cost wireless systems continues, new LNA topologies and design methodologies have become one of the most interesting challenges in the field of radio frequency system design. LÄS MER
5. THz Vector Beam Measurement System for APEX Instrument SHeFI and Microwave Cryogenic Low Noise Amplifier Design
Sammanfattning : This licentiate thesis describes results of the author’s work on development of THz vector beam measurement system and microwave cryogenic low-noise amplifier.The first part, and the main focus, of the thesis covers the vector beam measurement system for frequency range 210-500 GHz developed to characterize/verify the cold opticsof the APEX instrument SHeFI. LÄS MER