Sökning: "Eunjung Cha"

Hittade 2 avhandlingar innehållade orden Eunjung Cha.

  1. 1. InP High Electron Mobility Transistor Design for Cryogenic Low Noise Amplifiers

    Författare :Eunjung Cha; Chalmers University of Technology; []
    Nyckelord :cryogenic; stability; noise temperature; InP HEMT; LNA; MMIC;

    Sammanfattning : The InGaAs/InAlAs/InP high electron mobility transistor (InP HEMT) is the superior technology for the most demanding low-noise and high-speed microwave and millimeter-wave applications, in particular in radio astronomy and deep-space communication. InP HEMT has enabled cryogenic low noise amplifier (LNA) designs with noise temperatures about ten times the quantum noise limit from sub  GHz up to 120 GHz. LÄS MER

  2. 2. InP High Electron Mobility Transistors for Cryogenic Low-Noise and Low-Power Amplifiers

    Författare :Eunjung Cha; Chalmers University of Technology; []
    Nyckelord :dc power dissipation; cryogenic; InP high-electron mobility transistor InP HEMT ; noise temperature; low-noise amplifier LNA ; scaling; electrical stability.; indium channel content;

    Sammanfattning : The InAlAs/InGaAs/InP high-electron mobility transistor (InP HEMT) is the preferred low-noise device in cryogenic low-noise amplifiers (LNAs) operating at 5-15 K. Such LNAs are utilized in microwave and millimeter-wave detection in radio astronomy. LÄS MER