Sökning: "electron beam lithography EBL"
Visar resultat 6 - 10 av 21 avhandlingar innehållade orden electron beam lithography EBL.
6. Semiconductor Lasers with Gratings Defined by Electron Beam Lithography
Sammanfattning : This thesis deals with the fabrication and characterization of semiconductor lasers with gratings defined by electron-beam lithography (EBL). Both distributed-feedback (DFB) lasers for fiber-optic communication and grating-surface-emitting (GSE) lasers suitable for a number of novel applications, from free-space communication to optical processing, are treated. LÄS MER
7. Miniaturized localized surface plasmon resonance biosensors
Sammanfattning : Abstract Reliable and sensitive biosensors are required for fast and accurate diagnostics. Localized surface plasmon resonances (LSPRs) in noble-metal nanoparticles possess very high refractive index sensitivity close to the metal surface and therefore constitute an attractive biosensing platform. LÄS MER
8. Towards the Integration of Carbon nanostructures into CMOS technology
Sammanfattning : Relentless efforts for miniaturization of traditional complementary metal oxide semiconductor (CMOS) devices have reached the limit where the device characteristics are governed by quantum phenomena which are difficult to control. This engendered a need for finding alternative new materials that can be engineered to fabricate devices that will possess at least the same or even better performance than existing CMOS devices. LÄS MER
9. Thiol-ene Nanostructuring
Sammanfattning : Improving the health and well-being of humankind does not only constitutepart of our moral codes, but is also enlisted as the number three goal ofthe 2030 agenda for sustainable development set by the UN. Fulfilling suchobjective in the regions of resource-poor settings or for age groups with morevulnerability to infectious agents demands immediate actions. LÄS MER
10. Low and High Energy Ion Beams in Nanotechnology
Sammanfattning : In this thesis, two ways of fabrication of nanometer-sized semiconductor features are presented. Low Energy Ion Implantation (LEII) has been used to create shallow (sub-50 nm) and laterally small (5 m m – 200 nm) features by 10 keV As+ doping of B background doped Si. LÄS MER