Sökning: "silicidation"

Visar resultat 1 - 5 av 6 avhandlingar innehållade ordet silicidation.

  1. 1. Towards the Integration of Carbon nanostructures into CMOS technology

    Författare :Mohammad Kabir; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; transmission electron microscopy TEM .; chemical vapour deposition CVD ; electron beam lithography EBL ; carbon nanotube CNT ; silicidation; atomic force microscopy AFM ; carbon nanofiber CNF ; Complementary metal oxide semiconductor CMOS ; dc-glow discharge plasma; growth mechanism; metal catalyst; scanning electron microscopy SEM ;

    Sammanfattning : Relentless efforts for miniaturization of traditional complementary metal oxide semiconductor (CMOS) devices have reached the limit where the device characteristics are governed by quantum phenomena which are difficult to control. This engendered a need for finding alternative new materials that can be engineered to fabricate devices that will possess at least the same or even better performance than existing CMOS devices. LÄS MER

  3. 2. Silicon nanogaps: An electronic bridge to the molecular world

    Författare :Jonas Berg; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Nanocrystals; TSRAM; Silicon nanogaps; Molecular electronics; Selective etching; Resonant Tunneling Diodes; Molecules;

    Sammanfattning : We have designed and manufactured silicon nanogaps aimed at electrically interfacing molecules, utilizing the precision thickness control in an oxidation process. An insulating layer was formed on a silicon wafer, and then polysilicon was deposited on top. LÄS MER

  4. 3. Process integration issues for high-performance bipolar technology

    Författare :Tord E. Karlin; KTH; []
    Nyckelord :;

    Sammanfattning : The work in this thesis has been focused on processintegration issues for high-performance bipolar technologyincluding experimental work on self-aligned silicides,ion-implanted andin situdoped polysilicon emitters, strained silicongermanium for heterojunction bipolar transistors and physicalprocess and device simulation.Key issues for the self-aligned silicidation of small devicefeatures such as the influence of dopants, silicon morphologyand line width on titanium disilicide formation, phasetransformation and temperature stability, have been addressed. LÄS MER

  5. 4. Integration of silicide nanowires as Schottky barrier source/drain in FinFETs

    Författare :Zhen Zhang; Shi-Li Zhang; Tsu-Jae King Liu; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; CMOS technology; MOSFET; FinFET; Schottky diode; Schottky barrier soure drain; silicide; SALICIDE; SOI; multiple-gate; nanowire; sidewall transfer lithography; Electronics; Elektronik;

    Sammanfattning : The steady and aggressive downscaling of the physical dimensions of the conventional metal-oxide-semiconductor field-effect-transistor (MOSFET) has been the main driving force for the IC industry and information technology over the past decades. As the device dimensions approach the fundamental limits, novel double/trigate device architecture such as FinFET is needed to guarantee the ultimate downscaling. LÄS MER

  7. 5. The use of self-aligned Ti silicide in integrated Si technology

    Författare :Wlodek Kaplan; KTH; []
    Nyckelord :;

    Sammanfattning : The performance and cost efficiency of integrated circuits(IC) are constantly improved by a miniaturization of theindividual device dimensions. As a consequence, the materialand electrical properties of conductors and contacts becomecritical, and fabrication technology development meets newchallenges from the continuous reduction of devicedimensions. LÄS MER