Sökning: "VCSEL MOVPE InGaAs GaAs quantum wells"
Hittade 2 avhandlingar innehållade orden VCSEL MOVPE InGaAs GaAs quantum wells.
1. Epitaxy of GaAs-based long-wavelength vertical cavity lasers
Sammanfattning : Vertical cavity lasers (VCLs) are of great interest aslow-cost, high-performance light sources for fiber-opticcommunication systems. They have a number of advantages overconventional edge-emitting lasers, including low powerconsumption, efficient fiber coupling and wafer scalemanufacturing/testing. LÄS MER
2. Epitaxial growth optimization for 1.3-um InGaAs/GaAs Vertical-Cavity Surface-Emitting lasers
Sammanfattning : Long-wavelength (1.3-μm) vertical-cavity surface-emitting lasers (VCSELs) are of great interest as low-cost, high performance light sources for fiber-optic metro and access networks. During recent years the main development effort in this field has been directed towards all epitaxial GaAs-based structures by employing novel active materials. LÄS MER