Sökning: "Silicon-on-insulator"
Visar resultat 41 - 45 av 51 avhandlingar innehållade ordet Silicon-on-insulator.
41. Applications of Si1-xGex alloys for Ge devices and monolithic 3D integration
Sammanfattning : As the semiconductor industry moves beyond the 10 nm node, power consumption constraints and reduction of the negative impact of parasitic elements become important. Silicon germanium (Si1−xGex) alloys have been used to amplify the performance of Si based devices and integrated circuits (ICs) for decades. LÄS MER
42. Silicon nanowires, nanopillars and quantum dots : Fabrication and characterization
Sammanfattning : Semiconductor nanotechnology is today a very well studied subject, and demonstrations of possible applications and concepts are abundant. However, well-controlled mass-fabrication on the nanoscale is still a great challenge, and the lack of nanofabrication methods that provide the combination of required fabrication precision and high throughput, limits the large-scale use of nanodevices. LÄS MER
43. Advanced MEMS Technology for Terahertz Frequencies
Sammanfattning : With the development of terahertz (THz) technology, a variety of application demands are growing rapidly, such as high-rate communications, THz radars, environmental monitoring, medical imaging, and space exploration. However, the fabrication, integration, and packaging techniques for THz components and systems pose great challenges for a large-scale, cost-effective production. LÄS MER
44. Investigation of New Concepts and Solutions for Silicon Nanophotonics
Sammanfattning : Nowadays, silicon photonics is a widely studied research topic. Its high-index-contrast and compatibility with the complementary metal-oxide-semiconductor technology make it a promising platform for low cost high density integration. LÄS MER
45. Silicon Nanowires for Biomolecule Detection
Sammanfattning : Starting from silicon on insulator (SOI) material, with a top silicon layer thickness of 100 nm, silicon nanowires were fabricated in a top down approach using electron beam (e-beam) lithography and subsequent eactive ion etching (RIE) and oxidation. Nanowires as narrow as 30 nm could be achieved. LÄS MER