Sökning: "Silicon-on-insulator"
Visar resultat 21 - 25 av 51 avhandlingar innehållade ordet Silicon-on-insulator.
21. Fabrication and Characterization of Si-on-SiC Hybrid Substrates
Sammanfattning : In this thesis, we are making a new approach to fabricate silicon on insulator (SOI). By replacing the buried silicon dioxide and the silicon handling wafer with silicon carbide through hydrophilic wafer bonding, we have achieved silicon on crystalline silicon carbide for the first time and silicon on polycrystalline silicon carbide substrates at 150 mm wafer size. LÄS MER
22. Chemical Mechanical Polishing of Silicon and Silicon Dioxide in Front End Processing
Sammanfattning : Chemical mechanical polishing (CMP) has been used for a long time in the manufacturing of prime silicon wafers for the IC industry. Lately, other substrates, such as silicon-on-insulator has become in use which requires a greater control of the silicon CMP process. LÄS MER
23. Silicon Integrated HBV Frequency Multipliers for THz Applications
Sammanfattning : This thesis deals with integrated varactor diode circuits for terahertz (THz) applications. In particular hybrid, monolithic microwave integrated circuits (MMICs), and heterogeneous integration are explored for frequency multiplier applications. LÄS MER
24. Plasma assisted low temperature semiconductor wafer bonding
Sammanfattning : Direct semiconductor wafer bonding has emerged as a technology to meet the demand foradditional flexibility in materials integration. The applications are found in microelectronics, optoelectronics and micromechanics. For instance, wafer bonding is used to produce silicon-on-insulator (SOI) wafers. LÄS MER
25. Silicon device substrate and channel characteristics influenced by interface properties
Sammanfattning : This thesis is divided in two parts, one dealing with the depleted Si/Si structure, which is a substrate behaving as a semi-insulating material intended for radio-frequency applications and the other concerning high-k gate dielectrics (dielectrics with high dielectric constant) as the replacement for silicon dioxide as MOS gate dielectric.High frequency applications of CMOS integrated circuits, to lower cost, achieve higher performance and richer functionality, depends partly on the possibility to decrease the substrate coupling between different parts of the circuit. LÄS MER