Sökning: "chemical-mechanical polishing."

Visar resultat 1 - 5 av 8 avhandlingar innehållade orden chemical-mechanical polishing..

  1. 1. Chemical Mechanical Polishing of Silicon and Silicon Dioxide in Front End Processing

    Detta är en avhandling från Uppsala : Acta Universitatis Upsaliensis

    Författare :Markus Forsberg; Uppsala universitet.; [2004]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electronics; chemical mechanical polishing; chemical mechanical planarization; silicon; silicon dioxide; front end; shallow trench isolation; deep trench isolation; bipolar transistor; BiCMOS; wafer bonding; Elektronik; TECHNOLOGY Electrical engineering; electronics and photonics Electronics; TEKNIKVETENSKAP Elektroteknik; elektronik och fotonik Elektronik;

    Sammanfattning : Chemical mechanical polishing (CMP) has been used for a long time in the manufacturing of prime silicon wafers for the IC industry. Lately, other substrates, such as silicon-on-insulator has become in use which requires a greater control of the silicon CMP process. LÄS MER

  2. 2. Investigation of New Concepts and Solutions for Silicon Nanophotonics

    Detta är en avhandling från Stockholm : KTH

    Författare :Zhechao Wang; KTH.; [2010]
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Planar integrated circuit; silicon photonics; slot waveguide; finite-difference time-domain; waveguide grating coupler; ring resonator; polarization diversity scheme; polarization beam splitter; polarization rotator; hybrid silicon laser; epitaxial lateral overgrowth; chemical-mechanical polishing.; NATURAL SCIENCES Physics Other physics Optics; NATURVETENSKAP Fysik Övrig fysik Optik;

    Sammanfattning : Nowadays, silicon photonics is a widely studied research topic. Its high-index-contrast and compatibility with the complementary metal-oxide-semiconductor technology make it a promising platform for low cost high density integration. LÄS MER

  3. 3. Fabrication of Group IV Semiconductors on Insulator for Monolithic 3D Integration

    Detta är en avhandling från Kungliga Tekniska högskolan

    Författare :Ali Asadollahi; KTH.; [2018]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; monolithic three dimensional M3D integration; strained germanium on insulator sGeOI pMOSFETs; silicon silicon-germanium on insulator sSOI sSiGeOI nMOSFETs; Si0.5Ge0.5 strain-relaxed buffer SRB ; direct bonding; chemical mechanical polishing CMP ; compressively strained GeOI; tensile strained Si0.5Ge0.5OI;

    Sammanfattning : The conventional 2D geometrical scaling of transistors is now facing many challenges in order to continue the performance enhancement while decreasing power consumption. The decrease in the device power consumption is related to the scaling of the power supply voltage (Vdd) and interconnects wiring length. LÄS MER

  4. 4. SiGeC Heterojunction Bipolar Transistors

    Detta är en avhandling från Kista : Mikroelektronik och informationsteknik

    Författare :Erdal Suvar; KTH.; [2003]
    Nyckelord :Silicon-Germanium-Carbon SiGeC ; Heterojunction bipolar transistor HBT ; chemical vapor deposition CVD ; selective epitaxy; non-selective epitaxy; collector design; high-frequency measurement; dopant segregation; thermal stability;

    Sammanfattning : Heterojunction bipolar transistors (HBT) based on SiGeC havebeen investigated. Two high-frequency architectures have beendesigned, fabricated and characterized. Different collectordesigns were applied either by using selective epitaxial growthdoped with phosphorous or by non-selective epitaxial growthdoped with arsenic. LÄS MER

  5. 5. Epitaxy and characterization of SiGeC layers grown by reduced pressure chemical vapor deposition

    Detta är en avhandling från Kista : Mikroelektronik och informationsteknik

    Författare :Julius Hållstedt; KTH.; [2004]
    Nyckelord :Silicon germanium carbon SiGeC ; Epitaxy; Chemical vapor deposition CVD ; Loading effect; High resolution x-ray diffraction HRXRD ; Hall measurements; Atomic force microscopy AFM .;

    Sammanfattning : Heteroepitaxial SiGeC layers have attracted immenseattention as a material for high frequency devices duringrecent years. The unique properties of integrating carbon inSiGe are the additional freedom for strain and bandgapengineering as well as allowing more aggressive device designdue to the potential for increased thermal budget duringprocessing. LÄS MER