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1. 1. Applications of Si1-xGex alloys for Ge devices and monolithic 3D integration

   Författare :Konstantinos Garidis; Per-Erik Hellström; Mikael Östling; Sten Vollebregt; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon; germanium; epitaxy; selective; pn junction; germanium on insulator; GOI; Ge PFET; bonding; monolithic; sequential; three dimensional; 3D; low temperature; Informations- och kommunikationsteknik; Information and Communication Technology;

   Sammanfattning : As the semiconductor industry moves beyond the 10 nm node, power consumption constraints and reduction of the negative impact of parasitic elements become important. Silicon germanium (Si1−xGex) alloys have been used to amplify the performance of Si based devices and integrated circuits (ICs) for decades. LÄS MER