Sökning: "SiC CVD"
Visar resultat 1 - 5 av 31 avhandlingar innehållade orden SiC CVD.
1. Fluorinated SiC CVD
Sammanfattning : For the emerging semiconductor material silicon carbide (SiC) used in high power devices, chemical vapor deposition (CVD) is the most prominent method to create the electrically active SiC epitaxial layers in the device. The process of growing such epitaxial layers is to use a hydrocarbon and silane diluted in hydrogen flow through a hot chamber where chemical reactions take place in such manner that Si and C finally deposit on the surface creating epitaxial SiC. LÄS MER
2. CVD solutions for new directions in SiC and GaN epitaxy
Sammanfattning : This thesis aims to develop a chemical vapor deposition (CVD) process for the new directions in both silicon carbon (SiC) and gallium nitride (GaN) epitaxial growth. The properties of the grown epitaxial layers are investigated in detail in order to have a deep understanding. LÄS MER
3. Advances in SiC growth using chloride-based CVD
Sammanfattning : Silicon Carbide (SiC) is a wide band-gap semiconductor. Similar to silicon it can be used to make electronic devices which can be employed in several applications. SiC has some unique features, such as wide band-gap, high hardness, chemical inertness, and capability to withstand high temperatures. LÄS MER
4. Deep levels in SiC
Sammanfattning : Silicon carbide (SiC) has been discussed as a promising material for high power bipolar devices for almost twenty years. Advances in SiC crystal growth especially the development of chemical vapor deposition (CVD) have enabled the fabrication of high quality material. LÄS MER
5. Chloride-based Silicon Carbide CVD
Sammanfattning : Silicon carbide (SiC) is a promising material for high power and high frequency devices due to its wide bandgap, high break down field and high thermal conductivity. The most established technique for growth ofepitaxial layers of SiC is chemical vapor deposition (CVD) at around 1550 °C using silane, SiH4, and lighthydrocarbons e g propane, C3H8, or ethylene, C2H4, as precursors heavily diluted in hydrogen. LÄS MER