Sökning: "Calvin H. Jr Carter"

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  1. 1. Advances in SiC growth using chloride-based CVD

    Författare :Stefano Leone; Anne Henry; Erik Janzén; Calvin H. Jr Carter; Linköpings universitet; []
    Nyckelord :NATURAL SCIENCES; NATURVETENSKAP;

    Sammanfattning : Silicon Carbide (SiC) is a wide band-gap semiconductor. Similar to silicon it can be used to make electronic devices which can be employed in several applications. SiC has some unique features, such as wide band-gap, high hardness, chemical inertness, and capability to withstand high temperatures. LÄS MER