Sökning: "Urban Forsberg"

Visar resultat 1 - 5 av 22 avhandlingar innehållade orden Urban Forsberg.

  1. 1. CVD Growth of Silicon Carbide for High Frequency Applications

    Författare :Urban Forsberg; Erik Janzén; Anne Henry; Christian Brylinski; Linköpings universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Material physics with surface physics; Materialfysik med ytfysik;

    Sammanfattning : Silicon Carbide (SiC) is an important wide band gap semiconductor with outstanding electronic properties. With figures of merit far better than silicon, SiC is believed to replace and outcompete silicon in many applications using high frequencies, high voltage and high temperatures. LÄS MER

  3. 2. Skärgården i storstadens skugga : Arbetsvillkor och forskningsstrategier i storstadsnära glesbygdsområden. Exemplet Stockholms skärgård under efterkrigstiden

    Författare :Urban Nordin; Gunnel Forsberg; Stockholms universitet; []
    Nyckelord :SAMHÄLLSVETENSKAP; SOCIAL SCIENCES; Human geography; Kulturgeografi; Human Geography; kulturgeografi;

    Sammanfattning : .... LÄS MER

  4. 3. MOCVD growth of GaN-based high electron mobility transistor structures

    Författare :Jr-Tai Chen; Erik Janzén; Urban Forsberg; James S. Speck; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

    Sammanfattning : The present work was to improve the overall quality of GaN-based high electron mobility transistor (HEMT) epitaxial structures grown on semi-insulating (SI) SiC and native GaN substrates, using an approach called bottom-to-top optimization. The bottom-to-top optimization means an entire growth process optimization, from in-situ substrate pretreatment to the epitaxial growth and then the cooling process. LÄS MER

  5. 4. Surface-Controlled Chemical Vapor Deposition of Silicon Carbide

    Författare :Jing-Jia Huang; Henrik Pedersen; Urban Forsberg; Örjan Danielsson; Ulf Jansson; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

    Sammanfattning : Polycrystalline cubic silicon carbide, 3C-SiC, has long been investigated in the field of hard coating materials. The typical synthesis method for 3C-SiC coatings is thermal chemical vapor deposition (CVD) using either multicomponent precursors, e.g. methyltrichlorosilane, or a combination of single component precursors, e. LÄS MER

  7. 5. CVD solutions for new directions in SiC and GaN epitaxy

    Författare :Xun Li; Urban Forsberg; Erik Janzén; Henrik Pedersen; Sebastian Lourdudoss; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; CVD; SiC; GaN; epitaxy;

    Sammanfattning : This thesis aims to develop a chemical vapor deposition (CVD) process for the new directions in both silicon carbon (SiC) and gallium nitride (GaN) epitaxial growth. The properties of the grown epitaxial layers are investigated in detail in order to have a deep understanding. LÄS MER