Sökning: "GaN HEMT"

Visar resultat 26 - 30 av 40 avhandlingar innehållade orden GaN HEMT.

  1. 26. Hot-wall MOCVD of N-polar group-III nitride materials and high electron mobility transistor structures

    Författare :Hengfang Zhang; Vanya Darakchieva; Jr-Tai Chen; Ingemar Persson; Fatemeh (Shadi) Shahedipour-Sandvik; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Nitrogen-polar; MOCVD; III-nitride; GaN; AlN; C-face SiC; HEMTs;

    Sammanfattning : Group III-Nitride semiconductors: indium nitride (InN), gallium nitride (GaN), aluminum nitride (AlN) and their alloys continue to attract significant scientific interest due to their unique properties and diverse applications in photonic and electronic applications. Group-III nitrides have direct bandgaps which cover the entire spectral range from the infrared (InN) to the ultraviolet (GaN) and to the deep ultraviolet (AlN). LÄS MER

  3. 27. Nonlinear Microwave Measurement Architectures for Wideband Device Characterization

    Författare :Sebastian Gustafsson; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Nonlinear characterization; wideband; GaN HEMT; oscilloscope; microwave; active load-pull;

    Sammanfattning : The global surge for ubiquitous mobile communication requiring high speed and high capacity cellular networks has resulted in a golden age for the development of wireless technology. Modern cellular standards employ complex modulation formats with wider signal bandwidths to cope with the growing demand. LÄS MER

  4. 28. High-efficiency Power Amplification Techniques for Wireless Transmitters

    Författare :Hossein Mashad Nemati; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; load modulation; LDMOS; supply modulation; GaN HEMT; Power amplifier; wireless communications.; GaAs mHEMT; efficiency;

    Sammanfattning : The low efficiency of existing power amplifiers (PAs) is causing excessive energy consumption in wireless systems. Improving the PA efficiency is therefore of great environmental and economical importance. LÄS MER

  5. 29. Efficient and Wideband Power Amplifiers for Wireless Communications

    Författare :Paul Saad; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; multi-band; Doherty power amplifier; high efficiency; Branch-line coupler; wideband.; power amplifier; GaN-HEMT;

    Sammanfattning : The rapid evolution of wireless communication systems and the developmentof new standards require that wireless transmitters process several types ofstandards across multiple bands. Power amplifiers (PAs) are key componentsin wireless transmitters because they have a big impact on the overall systemperformance in terms of their bandwidth, efficiency, and linearity. LÄS MER

  7. 30. High Frequency (MHz) Resonant Converters using GaN HEMTs and Novel Planar Transformer Technology

    Författare :Hari Babu Kotte; kent Bertilsson; Bengt Oelmann; Noel Shammas; Torbjörn Thiringer; Per Karlsson; Mittuniversitetet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; GaN HEMTs; MHz Frequency; Resonant Converters; Planar Transformer Technology;

    Sammanfattning : The increased power consumption and power density demands of moderntechnologies have increased the technical requirements of DC/DC and AC/DC powersupplies. In this regard, the primary objective of the power supply researcher/engineeris to build energy efficient, high power density converters by reducing the losses andincreasing the switching frequency of converters respectively. LÄS MER