Sökning: "GaN HEMT"

Visar resultat 36 - 40 av 40 avhandlingar innehållade orden GaN HEMT.

  1. 36. Hot-wall MOCVD of N-polar group-III nitride materials

    Författare :Hengfang Zhang; Vanya Darakchieva; Jr-Tai Chen; Ingemar Persson; Elke Meissner; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

    Sammanfattning : Group III-Nitride semiconductors: indium nitride (InN), gallium nitride (GaN), aluminum nitride (AlN) and their alloys continue to attract significant scientific interest due to their unique properties and diverse applications in photonic and electronic applications. Group-III nitrides have direct bandgaps which cover the entire spectral range from the infrared (InN) to the ultraviolet (GaN) and to the deep ultraviolet (AlN). LÄS MER

  3. 37. Microwave Power Devices and Amplifiers for Radars and Communication Systems

    Författare :Sher Azam; Qamar ul Wahab; Erik Janzén; Georg Boeck; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Semiconductor physics; Halvledarfysik;

    Sammanfattning : SiC MESFETs and GaN HEMTs posses an enormous potential in power amplifiers at microwave frequencies due to their wide bandgap features of high electric field strength, high electron saturation velocity and high operating temperature. The high power density combined with the comparably high impedance attainable by these devices also offers new possibilities for wideband power microwave systems. LÄS MER

  4. 38. Advanced Heterostructure Designs and Recessed Ohmic Contacts for III-Nitride-Based HEMTs

    Författare :Johan Bergsten; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

    Sammanfattning : Modern III-Nitride (III-N) heterostructures offer high mobility, high electron density, large breakdown voltages and good thermal capabilities. High electron mobility transistors (HEMT) based on III-Ns are therefore ideal for high frequency, high power amplification. The intended applications are within radar and mobile communication. LÄS MER

  5. 39. Microwave power device characterization

    Författare :Kristoffer Andersson; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; statistical estimation; self-heating; Silicon Carbide; Gallium Nitride; mixer; thermal resistance; wide bandgap; microwave; error-correction; small-signalmodel;

    Sammanfattning : The first part of the thesis covers work done on device characterizationmethods. A statistical method for estimating small-signal model parametersin FET-models was proposed. A maximum likelihood estimator wasderived and the new method was compared to a standard direct extractiontechnique. LÄS MER

  7. 40. Class-E Power Amplifiers for Pulsed Transmitters

    Författare :MUSTAFA ÖZEN; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; RF-PWM; pulsed transmitters; frequency agility; energy efficiency; Class-E;

    Sammanfattning : Nowadays the main driving parameters for the radio transmitter research are: energy efficiency, frequency re-configurability and integration. Pulsed transmitter architectures have attracted large interest in the recent years due to their potential to meet these demands. LÄS MER