Sökning: "GaN HEMT"
Visar resultat 21 - 25 av 40 avhandlingar innehållade orden GaN HEMT.
21. GaN-based HEMTs for Cryogenic Low-Noise Applications
Sammanfattning : Radio-astronomy deals with signals and radiations of extremely weak intensity. Also, it requires robust and rugged technologies able to sustain and prevent the Radio Frequency Interferences (RFI). LÄS MER
22. Hot-wall MOCVD for advanced GaN HEMT structures and improved p-type doping
Sammanfattning : The transition to energy efficient smart grid and wireless communication with improved capacity require the development and optimization of next generation semiconductor technologies and electronic device components. Indium nitride (InN), gallium nitride (GaN) and aluminum nitride (AlN) compounds and their alloys are direct bandgap semiconductors with bandgap energies ranging from 0. LÄS MER
23. High Efficiency Microwave Power Amplifiers in GaN-HEMT Technology
Sammanfattning : .... LÄS MER
24. MMIC-based Low Phase Noise Millimetre-wave Signal Source Design
Sammanfattning : Wireless technology for future communication systems has been continuously evolving to meet society’s increasing demand on network capacity. The millimetre-wave frequency band has a large amount of bandwidth available, which is a key factor in enabling the capability of carrying higher data rates. LÄS MER
25. Oscillator design in III-V technologies
Sammanfattning : The thesis treats the design of low phase noise oscillators/VCOs in GaAs/InGaP HBT and GaN HEMT technologies. The covered topics are: active device modeling, noise characterization, passive structures, phase noise models, simulation/measurement tools, circuit topologies, and design techniques. LÄS MER