Sökning: "GaN HEMTs"
Visar resultat 1 - 5 av 33 avhandlingar innehållade orden GaN HEMTs.
1. Processing, Characterization and Modeling of AlGaN/GaN HEMTs
Sammanfattning : III-Nitrides electronic properties make them currently the materials of choice for high-power high-frequency applications. Their wide bandgaps, high breakdown fields, the high electron peak and saturation velocities combined with the large conduction band offset and the high electron mobility observed in AlGaN/GaN heterostructures enable excellent microwave power performance of AlGaN/GaN high electron mobility transistors (HEMTs). LÄS MER
2. Buffer Related Dispersive Effects in Microwave GaN HEMTs
Sammanfattning : In applications such as mobile communication and radar, microwave power generation at high frequency is of utmost importance. The GaN HEMT offers a unique set of properties that makes it suitable for high power amplification at high frequencies. LÄS MER
3. Hot-wall MOCVD of N-polar group-III nitride materials and high electron mobility transistor structures
Sammanfattning : Group III-Nitride semiconductors: indium nitride (InN), gallium nitride (GaN), aluminum nitride (AlN) and their alloys continue to attract significant scientific interest due to their unique properties and diverse applications in photonic and electronic applications. Group-III nitrides have direct bandgaps which cover the entire spectral range from the infrared (InN) to the ultraviolet (GaN) and to the deep ultraviolet (AlN). LÄS MER
4. Nonlinear Characterization of Wideband Microwave Devices and Dispersive Effects in GaN HEMTs
Sammanfattning : Measurements play a key role in the development of microwave hardware as they allow engineers to test and verify the RF performance on a system, circuit, and component level. Since modern cellular standards employ complex modulation formats with wider signal bandwidths to cope with the growing demand of higher datarates, nonlinear characterization using wideband stimuli is becoming increasingly important. LÄS MER
5. High Frequency (MHz) Resonant Converters using GaN HEMTs and Novel Planar Transformer Technology
Sammanfattning : The increased power consumption and power density demands of moderntechnologies have increased the technical requirements of DC/DC and AC/DC powersupplies. In this regard, the primary objective of the power supply researcher/engineeris to build energy efficient, high power density converters by reducing the losses andincreasing the switching frequency of converters respectively. LÄS MER