Sökning: "GaN-HEMT"

Visar resultat 1 - 5 av 25 avhandlingar innehållade ordet GaN-HEMT.

  1. 1. Optimum GaN HEMT Oscillator Design Targeting Low Phase Noise

    Författare :Mikael Hörberg; Chalmers University of Technology; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; low frequency noise; resonator coupling; cavity resonator; GaN HEMT; MMIC; reflection oscillator; phase noise;

    Sammanfattning : The thesis considers design of low phase noise oscillators, given the boundary condition of the used technology. Important conditions are the power handling of the active device, device noise floor, the quality factor of the resonator, bias settings, and low frequency noise. LÄS MER

  2. 2. GaN HEMT Low Frequency Noise Characterization for Low Phase Noise Oscillator Design

    Författare :Thi Ngoc Do Thanh; Chalmers University of Technology; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Low frequency noise; flicker noise; phase noise; deposition method.; oscillator; VCO; GaAs pHEMT; MMIC; GaN HEMT; passivation; InGaP HBT;

    Sammanfattning : The thesis presents low frequency noise (LFN) characterization of Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) for low phase noise oscillator design. First, GaN HEMT technology is benchmarked versus other transistor technologies, e.g. LÄS MER

  3. 3. Low Phase Noise GaN HEMT Oscillator Design based on High-Q resonators

    Författare :Mikael Hörberg; Chalmers University of Technology; []
    Nyckelord :NATURVETENSKAP; TEKNIK OCH TEKNOLOGIER; NATURAL SCIENCES; ENGINEERING AND TECHNOLOGY; resonator coupling; reflection oscillator; MMIC; phase noise; cavity resonator; low-frequency noise; GaN HEMT; MEMS;

    Sammanfattning : The thesis considers the design and optimization of oscillators targeting low phase noise, given boundary conditions from the technology. Crucial technology figures are power capability, RF noise figure, low-frequency noise and the quality factor (Q-factor) of the resonator. LÄS MER

  4. 4. Optimization of Ohmic Contacts and Surface Passivation for ‘Buffer-Free’ GaN HEMT Technologies

    Författare :Chen Ding Yuan; Chalmers University of Technology; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; ENGINEERING AND TECHNOLOGY; QuanFINE; passivation; GaN HEMT; pretreatment; ohmic contact;

    Sammanfattning : Gallium nitride high electron mobility transistors (GaN HEMTs) draw attention from high frequency and high power industries due to unique properties including high electron mobility and saturation velocity combined with high breakdown voltage. This makes GaN HEMTs suitable for power devices with high switching speed and high frequency applications with high power density requirements. LÄS MER

  5. 5. GaN HEMT Based Highly Integrated Active Antenna Element for Millimeter-Wave Array Transmitters

    Författare :Wan-Chun Liao; Chalmers University of Technology; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; GaN HEMT; co-design; power amplifier.; millimeter-wave; energy-efficient; mutual coupling; Active integrated antenna;

    Sammanfattning : .... LÄS MER