Sökning: "Bipolar Junction Transistors BJT"
Visar resultat 1 - 5 av 18 avhandlingar innehållade orden Bipolar Junction Transistors BJT.
1. Fabrication and Characterization of Silicon Carbide Power Bipolar Junction Transistors
Sammanfattning : Silicon carbide bipolar junction transistors (BJTs) are attractive power switching devices because of the unique material properties of SiC with high breakdown electric field, high thermal conductivity and high saturated drift velocity of electrons. The SiC BJT has potential for very low specific on-resistances and this together with high temperature operation makes it very suitable for applications with high power densities. LÄS MER
2. Simulation and Characterization of Silicon Carbide Power Bipolar Junction Transistors
Sammanfattning : The superior characteristics of silicon carbide, compared with silicon, have suggested considering this material for the next generation of power semiconductor devices. Among the different power switches, the bipolar junction transistor (BJT) can provide a very low forward voltage drop, a high current capability and a fast switching speed. LÄS MER
3. Design Optimization and Realization of 4H-SiC Bipolar Junction Transistors
Sammanfattning : 4H-SiC-based bipolar junction transistors (BJTs) are attractive devices for high-voltage and high-temperature operations due to their high current capability, low specific on-resistance, and process simplicity. To extend the potential of SiC BJTs to power electronic industrial applications, it is essential to realize high-efficient devices with high-current and low-loss by a reliable and wafer-scale fabrication process. LÄS MER
4. High power bipolar junction transistors in silicon carbide
Sammanfattning : As a power device material, SiC has gained remarkable attention to its high thermal conductivity and high breakdown electric field. SiC bipolar junction transistors (BJTs) are interesting for applications as power switch for 600 V-1200 V applications. LÄS MER
5. Low-Frequency Noise in Si-Based High-Speed Bipolar Transistors
Sammanfattning : .... LÄS MER