Sökning: "Gunnar Malm"
Visar resultat 1 - 5 av 8 avhandlingar innehållade orden Gunnar Malm.
1. High Frequency Characterization and Modeling of SiGe Heterojunction Bipolar Transistors
Sammanfattning : .... LÄS MER
2. Simulation and Characterization of Silicon Carbide Power Bipolar Junction Transistors
Sammanfattning : The superior characteristics of silicon carbide, compared with silicon, have suggested considering this material for the next generation of power semiconductor devices. Among the different power switches, the bipolar junction transistor (BJT) can provide a very low forward voltage drop, a high current capability and a fast switching speed. LÄS MER
3. Dynamics and Intrinsic Variability of Spintronic Devices
Sammanfattning : Spintronics is a scientific domain focusing on utilizing electron spin for information processing. This is the element that distinguishes it from electronics, which only utilizes the charge of electrons. LÄS MER
4. Microwave Frequency Stability and Spin Wave Mode Structure in Nano-Contact Spin Torque Oscillators
Sammanfattning : The nano-contact spin torque oscillator (NC-STO) is an emerging device for highly tunable microwave frequency generation in the range from 0.1 GHz to above 65 GHz with an on-chip footprint on the scale of a few μm. LÄS MER
5. SiC CMOS and memory devices for high-temperature integrated circuits
Sammanfattning : High-temperature electronics find use in extreme environments, like data logging in downhole drilling for geothermal energy production, inside of high-temperature turbines, industrial gas sensors and space electronics. The simplest systems use a sensor and a transmitter, but more advance electronic systems would additionally require a microcontroller with memory. LÄS MER