Sökning: "on-resistance"

Visar resultat 1 - 5 av 43 avhandlingar innehållade ordet on-resistance.

1. 1. A Salutogenic perspective on resistance training : a study on healthy old adult women

   Författare :Helena Ericson; Mikael Quennerstedt; Monica Eriksson; Örebro universitet; []
   Nyckelord :MEDICIN OCH HÄLSOVETENSKAP; MEDICAL AND HEALTH SCIENCES; Health resources; exercise; resistance traning; salutogenes; old adult women; healthy aging; hope; negative affect; psychological outcomes; Sports Science; Idrottsvetenskap;

   Sammanfattning : The number of people aged 60 years and over has doubled since 1980and the World Health Organization predicts that the population of over60s will reach 2 billion by the year 2050. An ageing population poses bothchallenges and opportunities for society and for individuals. LÄS MER

3. 2. Vertical High-Voltage Transistors on Thick Silicon-on-Insulator

   Författare :Ulrich Heinle; Gehan Amaratunga; Uppsala universitet; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electronics; SOI; vertical DMOS; trench isolation; power electronics; integration; on-resistance; capacitive coupling; self-heating; switching; Elektronik; Electronics; Elektronik; Elektronik; Electronics;

   Sammanfattning : More and more electronic products, like battery chargers and power supplies, as well as applications in telecommunications and automotive electronics are based on System-on-Chip solutions, where signal processing and power devices are integrated on the same chip. The integration of different functional units offers many advantages in terms of reliability, reduced power consumption, weight and space reduction, leading to products with better performance at a hopefully lower price. LÄS MER

4. 3. Simulation and Characterization of Silicon Carbide Power Bipolar Junction Transistors

   Författare :Benedetto Buono; Mikael Östling; Gunnar Malm; Martin Domeij; Lothar Frey; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; silicon carbide; power device; BJT; diode; simulation; characterization; current gain; on-resistance; breakdown voltage; forward voltage drop; degradation; SRA - ICT; SRA - Informations- och kommunikationsteknik;

   Sammanfattning : The superior characteristics of silicon carbide, compared with silicon, have suggested considering this material for the next generation of power semiconductor devices. Among the different power switches, the bipolar junction transistor (BJT) can provide a very low forward voltage drop, a high current capability and a fast switching speed. LÄS MER

5. 4. Fabrication and Characterization of Silicon Carbide Power Bipolar Junction Transistors

   Författare :Hyung-Seok Lee; Carl-Mikael Zetterling; Tat-Sing Chow; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; silicon carbide; power device; BJT; current gain; specific on resistance RSP_ON ; breakdown voltage; forward voltage drop; surface recombination; ohmic contact.; Electrical engineering; electronics and photonics; Elektroteknik; elektronik och fotonik;

   Sammanfattning : Silicon carbide bipolar junction transistors (BJTs) are attractive power switching devices because of the unique material properties of SiC with high breakdown electric field, high thermal conductivity and high saturated drift velocity of electrons. The SiC BJT has potential for very low specific on-resistances and this together with high temperature operation makes it very suitable for applications with high power densities. LÄS MER

7. 5. Design Optimization and Realization of 4H-SiC Bipolar Junction Transistors

   Författare :Hossein Elahipanah; Mikael Östling; Carl-Mikael Zetterling; Anders Hallèn; Adolf Schöner; Tsunenobu Kimoto; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; 4H-SiC; BJT; high-voltage and ultra-high-voltage; high-temperature; self-aligned Ni-silicide Ni-SALICIDE ; lift-off-free; wafer-scale; current gain; Darlington; Electrical Engineering; Elektro- och systemteknik; Informations- och kommunikationsteknik; Information and Communication Technology;

   Sammanfattning : 4H-SiC-based bipolar junction transistors (BJTs) are attractive devices for high-voltage and high-temperature operations due to their high current capability, low specific on-resistance, and process simplicity. To extend the potential of SiC BJTs to power electronic industrial applications, it is essential to realize high-efficient devices with high-current and low-loss by a reliable and wafer-scale fabrication process. LÄS MER