Sökning: "sic!"

Visar resultat 21 - 25 av 424 avhandlingar innehållade ordet sic!.

  1. 21. Shallow traps at the SiO₂/SiC interface

    Författare :Halldor Olafsson; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; silicon carbide SiC ; deep level transient spectroscopy DLTS ; capacitance-voltage C-V ; metal-oxide-semiconductor MOS ; thermally stimulated current TSC ; interface states;

    Sammanfattning : .... LÄS MER

  3. 22. High-Efficiency SiC Power Conversion : Base Drivers for Bipolar Junction Transistors and Performance Impacts on Series-Resonant Converters

    Författare :Georg Tolstoy; Hans-Peter Nee; Stig Munk-Nielsen; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Carbide; Bipolar Junction Transistor BJT ; Resonant converter; Series-resonant converter SLR ; Base drive circuits; High- Efficiency Converters; High-Frequency Converters; Electrical Engineering; Elektro- och systemteknik;

    Sammanfattning : This thesis aims to bring an understanding to the silicon carbide (SiC) bipolar junction transistor (BJT). SiC power devices are superior to the silicon IGBT in several ways. They are for instance, able to operate with higher efficiency, at higher frequencies, and at higher junction temperatures. LÄS MER

  4. 23. Silicon Carbide Reinforced Alumina and Mullite Ceramics

    Författare :Stefan Gustafsson; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Ceramic Nanocomposites; Creep; SEM; SiC; Grain Boundaries; Microanalysis; Mullite; Pressureless Sintering; TEM; Alumina;

    Sammanfattning : The aim of this work was to develop homogeneous ceramic nanocomposite materials with good thermal and structural stability as well as good mechanical properties. The development of microstructure was related to the material properties. LÄS MER

  5. 24. Monte Carlo Simulations of Homogeneous and Inhomogeneous Transport in Silicon Carbide

    Författare :Mats Hjelm; KTH; []
    Nyckelord :simulation; Monte Carlo; SiC; charge transport; MOSFET; MESFET;

    Sammanfattning : The importance of simulation is increasing in the researchon semiconductor devices and materials. Simulations are used toexplore the characteristics of novel devices as well asproperties of the semiconductor materials that are underinvestigation, i.e. generally materials where the knowledge isinsufficient. LÄS MER

  7. 25. Design Optimization and Realization of 4H-SiC Bipolar Junction Transistors

    Författare :Hossein Elahipanah; Mikael Östling; Carl-Mikael Zetterling; Anders Hallèn; Adolf Schöner; Tsunenobu Kimoto; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; 4H-SiC; BJT; high-voltage and ultra-high-voltage; high-temperature; self-aligned Ni-silicide Ni-SALICIDE ; lift-off-free; wafer-scale; current gain; Darlington; Electrical Engineering; Elektro- och systemteknik; Informations- och kommunikationsteknik; Information and Communication Technology;

    Sammanfattning : 4H-SiC-based bipolar junction transistors (BJTs) are attractive devices for high-voltage and high-temperature operations due to their high current capability, low specific on-resistance, and process simplicity. To extend the potential of SiC BJTs to power electronic industrial applications, it is essential to realize high-efficient devices with high-current and low-loss by a reliable and wafer-scale fabrication process. LÄS MER