Sökning: "current gain degradation"

Visar resultat 1 - 5 av 24 avhandlingar innehållade orden current gain degradation.

1. 1. Simulation and Characterization of Silicon Carbide Power Bipolar Junction Transistors

   Författare :Benedetto Buono; Mikael Östling; Gunnar Malm; Martin Domeij; Lothar Frey; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; silicon carbide; power device; BJT; diode; simulation; characterization; current gain; on-resistance; breakdown voltage; forward voltage drop; degradation; SRA - ICT; SRA - Informations- och kommunikationsteknik;

   Sammanfattning : The superior characteristics of silicon carbide, compared with silicon, have suggested considering this material for the next generation of power semiconductor devices. Among the different power switches, the bipolar junction transistor (BJT) can provide a very low forward voltage drop, a high current capability and a fast switching speed. LÄS MER

3. 2. Characterisation of bipolar transistors : parameter extraction and degradation dynamics

   Författare :Fredrik Ingvarson; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; bipolar junction transistor; reverse-bias stress; early effect; Gummel-Poon transistor model; recovery dynamics; parameter extraction; stress dynamics; direct extraction; current gain degradation; series resistance extraction;

   Sammanfattning : .... LÄS MER

4. 3. Structural and functional investigation of underexplored carbohydrate-active enzyme families

   Författare :Andrea Seveso; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; carbohydrate-active enzymes; lytic polysaccharide monooxygenase; plant biomass degradation; copper radical oxidases; carbohydrate esterase; protein structure determination; protein structure prediction;

   Sammanfattning : The known consequences of the current fossil-based economy require a transition towards a bio-based economy. Development of biorefineries in which plant biomass can be utilized as a renewable source of energy and building blocks to produce both commodities and high-value products, is a key step in this transition. LÄS MER

5. 4. Electro-thermal simulations and measurements of silicon carbide power transistors

   Författare :Wei Liu; Carl-Mikael Zetterling; Nicholas G. Wright; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electronics; silicon carbide; power device; metal semiconductor field-effect transistor; bipolar junction transistor; electro-thermal simulation; Elektronik; Electronics; Elektronik;

   Sammanfattning : The temperature dependent electrical characteristics of silicon carbide power transistors – 4H-SiC metal semiconductor field-effect transistors (MESFETs) and 4H-SiC bipolar junction transistors (BJTs) have been investigated through simulation and experimental approaches. Junction temperatures and temperature distributions in devices under large power densities have been estimated. LÄS MER

7. 5. Silicon Carbide Technology for High- and Ultra-High-Voltage Bipolar Junction Transistors and PiN Diodes

   Författare :Arash Salemi; Mikael Östling; Carl-Mikael Zetterling; Anders Hallen; Nando Kaminski; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Informations- och kommunikationsteknik; Information and Communication Technology;

   Sammanfattning : Silicon carbide (SiC) is an attractive material for high-voltage and high-temperature electronic applications owing to the wide bandgap, high critical electric field, and high thermal conductivity. High- and ultra-high-voltage silicon carbide bipolar devices, such as bipolar junction transistors (BJTs) and PiN diodes, have the advantage of a low ON-resistance due to conductivity modulation compared to unipolar devices. LÄS MER