Sökning: "bipolar junction transistors"

Visar resultat 16 - 20 av 33 avhandlingar innehållade orden bipolar junction transistors.

  1. 16. Radiation Hardness of 4H-SiC Devices and Circuits

    Författare :Sethu Saveda Suvanam; Anders Hallén; Carl-Mikael Zetterling; Ulrike Grossner; KTH; []
    Nyckelord :Silicon carbide; radiation hardness; protons; gamma radiation; bipolar junction transistors; aluminium oxide; surface recombination.; Informations- och kommunikationsteknik; Information and Communication Technology;

    Sammanfattning : Advances in space and nuclear technologies are limited by the capabilities of the conventional silicon (Si) electronics. Hence, there is a need to explore materials beyond Si with enhanced properties to operate in extreme environments. In this regards, silicon carbide (4H-SiC), a wide bandgap semiconductor, provides suitable solutions. LÄS MER

  3. 17. Impact of Ionizing Radiation on 4H-SiC Devices

    Författare :Muhammad Usman; Anders Hallén; Einar Örn Sveinbjörnsson; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon carbide; ionizing radiation; bipolar junction transistors; reliability; surface passivation; high-k dielectrics; MIS; radiation hardness;

    Sammanfattning : Electronic components, based on current semiconductor technologies and operating in radiation rich environments, suffer degradation of their performance as a result of radiation exposure. Silicon carbide (SiC) provides an alternate solution as a radiation hard material, because of its wide bandgap and higher atomic displacement energies, for devices intended for radiation environment applications. LÄS MER

  4. 18. On Reliability of SiC Power Devices in Power Electronics

    Författare :Diane-Perle Sadik; Hans-Peter Nee; Per Ranstad; Nando Kaminski; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Carbide; Metal-Oxide-Semiconductor Field-Effect Transistor MOSFET ; Junction Field-Effect Transistor JFET ; Bipolar Junction Transistor BJT ; Reliability; Failure Analysis; Reliability Testing; Short- Circuit Currents; Humidity; Resonant converter; Series-resonant converter SLR ; Base drive circuits; Gate drive circuits; Life-Cycle Cost Analysis LCCA ; Kiselkarbid; MOSFETar; JFETar; Bipolär Junction Transistor BJT ; Tillförlitlighet; Robusthet; Felanalys; Tillförlitlighetstestning; Kortslutningsströmmar; Luftfuktighet; Resonansomvandlare; Serie-resonansomvandlare SLR ; Basdrivkretsar; Gate-drivkretsar; Felskydd; Livscykelkostnadsanalys; Electrical Engineering; Elektro- och systemteknik;

    Sammanfattning : Silicon Carbide (SiC) is a wide-bandgap (WBG) semiconductor materialwhich has several advantages such as higher maximum electric field, lowerON-state resistance, higher switching speeds, and higher maximum allowablejunction operation temperature compared to Silicon (Si). In the 1.2 kV - 1. LÄS MER

  5. 19. High-Temperature Analog and Mixed-Signal Integrated Circuits in Bipolar Silicon Carbide Technology

    Författare :Raheleh Hedayati; Carl-Mikael Zetterling; H. Alan Mantooth; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; silicon carbide SiC ; bipolar junction transistor BJT ; high temperature; SiC integrated circuit; Spice Gummel-Poon SGP ; operational amplifier opamp ; negative feedback amplifier; bandgap reference; masterslave comparator; digital-to-analog converter DAC ; analog-to-digital converter ADC ; flash ADC; successive approximation register SAR ADC; Electrical Engineering; Elektro- och systemteknik;

    Sammanfattning : Silicon carbide (SiC) integrated circuits (ICs) can enable the emergence of robust and reliable systems, including data acquisition and on-site control for extreme environments with high temperature and high radiation such as deep earth drilling, space and aviation, electric and hybrid vehicles, and combustion engines. In particular, SiC ICs provide significant benefit by reducing power dissipation and leakage current at temperatures above 300 °C compared to the Si counterpart. LÄS MER

  7. 20. Silicon Carbide Bipolar Integrated Circuits for High Temperature Applications

    Författare :Luigia Lanni; Carl-Mikael Zetterling; Niklas Rorsman; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

    Sammanfattning : Silicon carbide (SiC) is a semiconductor that provides significant advantages for high-power and high-temperature applications thanks to its wide bandgap, which is several times larger than silicon. The resulting high breakdown field, high thermal conductivity and high intrinsic temperature (well above 600 °C) allow high temperature operation of SiC devices and relaxed cooling requirements. LÄS MER