Sökning: "bandgap reference"
Visar resultat 1 - 5 av 10 avhandlingar innehållade orden bandgap reference.
1. High-Temperature Analog and Mixed-Signal Integrated Circuits in Bipolar Silicon Carbide Technology
Sammanfattning : Silicon carbide (SiC) integrated circuits (ICs) can enable the emergence of robust and reliable systems, including data acquisition and on-site control for extreme environments with high temperature and high radiation such as deep earth drilling, space and aviation, electric and hybrid vehicles, and combustion engines. In particular, SiC ICs provide significant benefit by reducing power dissipation and leakage current at temperatures above 300 °C compared to the Si counterpart. LÄS MER
2. Window Layer Structures for Chalcopyrite Thin-Film Solar Cells
Sammanfattning : This thesis aims to contribute to the development of improved window layer structures for chalcopyrite thin-film solar cells, with an emphasis on the buffer layer, to assist future reductions of the levelized cost of energy. This is realized by exploring the potential of existing materials and deposition processes, as well as developing new buffer layer processes based on atomic layer deposition (ALD). LÄS MER
3. Radiation Hardness of 4H-SiC Devices and Circuits
Sammanfattning : Advances in space and nuclear technologies are limited by the capabilities of the conventional silicon (Si) electronics. Hence, there is a need to explore materials beyond Si with enhanced properties to operate in extreme environments. In this regards, silicon carbide (4H-SiC), a wide bandgap semiconductor, provides suitable solutions. LÄS MER
4. Modeling and electrical characterization of Cu(In,Ga)Se2 and Cu2ZnSnS4 solar cells
Sammanfattning : In this thesis, modeling and electrical characterization have been performed on Cu(In,Ga)Se2 (CIGS) and Cu2ZnSnS4 (CZTS) thin film solar cells, with the aim to investigate potential improvements to power conversion efficiency for respective technology. The modeling was primarily done in SCAPS, and current-voltage (J-V), quantum efficiency (QE) and capacitance-voltage (C-V) were the primary characterization methods. LÄS MER
5. Wireless, Single Chip, High Temperature Monitoring of Power Semiconductors
Sammanfattning : Because failures in power electronics can cause production stops and unnecessary damage to interconnected equipment, monitoring schemes that are able to predict such failures provide various economic and safety benefits. The primary motivation for this thesis is that such monitoring schemes can increase the reliability of energy production plants. LÄS MER